Issued Patents All Time
Showing 151–175 of 323 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10541330 | Forming stacked nanowire semiconductor device | Kangguo Cheng, Peng Xu, Chen Zhang | 2020-01-21 |
| 10535652 | Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-01-14 |
| 10529713 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-01-07 |
| 10529823 | Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2020-01-07 |
| 10522661 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2019-12-31 |
| 10522342 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2019-12-31 |
| 10505048 | Self-aligned source/drain contact for vertical field effect transistor | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2019-12-10 |
| 10505019 | Vertical field effect transistors with self aligned source/drain junctions | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2019-12-10 |
| 10497799 | Dummy dielectric fins for finFETs with silicon and silicon germanium channels | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-12-03 |
| 10490453 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2019-11-26 |
| 10483375 | Fin cut etch process for vertical transistor devices | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2019-11-19 |
| 10468532 | Nanosheet substrate isolation scheme by lattice matched wide bandgap semiconductor | Alexander Reznicek, Jingyun Zhang, Choonghyun Lee | 2019-11-05 |
| 10468524 | Vertical field effect transistor with improved reliability | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2019-11-05 |
| 10446686 | Asymmetric dual gate fully depleted transistor | Terry Hook, Kangguo Cheng, Yi Song, Chen Zhang, Peng Xu | 2019-10-15 |
| 10439063 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Alexander Reznicek, Shogo Mochizuki, Jingyun Zhang | 2019-10-08 |
| 10438949 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2019-10-08 |
| 10431659 | Fabrication of a vertical fin field effect transistor with a reduced contact resistance | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-10-01 |
| 10431667 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Heng Wu, Peng Xu | 2019-10-01 |
| 10424639 | Nanosheet transistor with high-mobility channel | Wenyu Xu, Kangguo Cheng, Chen Zhang | 2019-09-24 |
| 10424653 | Vertical transport field effect transistor on silicon with defined junctions | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2019-09-24 |
| 10411106 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-09-10 |
| 10411114 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Wenyu Xu, Peng Xu | 2019-09-10 |
| 10395922 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2019-08-27 |
| 10396172 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-08-27 |
| 10388577 | Nanosheet devices with different types of work function metals | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-08-20 |