Issued Patents All Time
Showing 201–225 of 323 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10242986 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-26 |
| 10243042 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Tenko Yamashita | 2019-03-26 |
| 10236214 | Vertical transistor with variable gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-19 |
| 10236355 | Fabrication of a vertical fin field effect transistor with a reduced contact resistance | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-19 |
| 10229971 | Integration of thick and thin nanosheet transistors on a single chip | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-12 |
| 10217845 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-02-26 |
| 10217817 | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2019-02-26 |
| 10199278 | Vertical field effect transistor (FET) with controllable gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-02-05 |
| 10177046 | Vertical FET with different channel orientations for NFET and PFET | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-01-08 |
| 10177223 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Tenko Yamashita | 2019-01-08 |
| 10170590 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Heng Wu, Peng Xu | 2019-01-01 |
| 10170636 | Gate-to-bulk substrate isolation in gate-all-around devices | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2019-01-01 |
| 10170618 | Vertical transistor with reduced gate-induced-drain-leakage current | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-01-01 |
| 10170331 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-01-01 |
| 10164056 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Heng Wu, Peng Xu | 2018-12-25 |
| 10164055 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-12-25 |
| 10153367 | Gate length controlled vertical FETs | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-12-11 |
| 10147808 | Techniques for forming vertical tunneling FETS | Juntao Li, Kangguo Cheng, Peng Xu | 2018-12-04 |
| 10141441 | Vertical transistor with back bias and reduced parasitic capacitance | Kangguo Cheng, Peng Xu, Chen Zhang | 2018-11-27 |
| 10141448 | Vertical FETs with different gate lengths and spacer thicknesses | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2018-11-27 |
| 10141234 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-11-27 |
| 10134866 | Field effect transistor air-gap spacers with an etch-stop layer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-11-20 |
| 10134874 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-11-20 |
| 10134760 | FinFETs with various fin height | Kangguo Cheng, Terence B. Hook, Balasubramanian Pranatharthiharan | 2018-11-20 |
| 10128122 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-11-13 |