Issued Patents All Time
Showing 226–250 of 323 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121879 | Forming odd number of fins by sidewall imaging transfer | Kangguo Cheng | 2018-11-06 |
| 10115805 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2018-10-30 |
| 10109491 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-10-23 |
| 10103246 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-10-16 |
| 10096674 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-10-09 |
| 10096673 | Nanowire with sacrificial top wire | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-10-09 |
| 10090412 | Vertical transistor with back bias and reduced parasitic capacitance | Kangguo Cheng, Peng Xu, Chen Zhang | 2018-10-02 |
| 10084081 | Vertical transistor with enhanced drive current | Kangguo Cheng, Alexander Reznicek | 2018-09-25 |
| 10083871 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-09-25 |
| 10079304 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Juntao Li | 2018-09-18 |
| 10079302 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Juntao Li | 2018-09-18 |
| 10074652 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2018-09-11 |
| 10069015 | Width adjustment of stacked nanowires | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-09-04 |
| 10068799 | Self-aligned contact | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-09-04 |
| 10037885 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-07-31 |
| 10032676 | Vertical field effect transistor having U-shaped top spacer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-07-24 |
| 10020398 | Stress induction in 3D device channel using elastic relaxation of high stress material | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2018-07-10 |
| 10020416 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-07-10 |
| 10002809 | Top contact resistance measurement in vertical FETs | Kangguo Cheng, Zuoguang Liu, Wenyu Xu, Chen Zhang | 2018-06-19 |
| 10002803 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-06-19 |
| 9997421 | Top contact resistance measurement in vertical FETS | Kangguo Cheng, Zuoguang Liu, Wenyu Xu, Chen Zhang | 2018-06-12 |
| 9997618 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2018-06-12 |
| 9997613 | Integrated etch stop for capped gate and method for manufacturing the same | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-06-12 |
| 9997597 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-06-12 |
| 9991166 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2018-06-05 |