RR

Robert R. Robison

IBM: 128 patents #372 of 70,183Top 1%
Globalfoundries: 13 patents #279 of 4,424Top 7%
TE Tessera: 3 patents #129 of 271Top 50%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 Rexford, NY: #1 of 148 inventorsTop 1%
🗺 New York: #263 of 115,490 inventorsTop 1%
Overall (All Time): #6,545 of 4,157,543Top 1%
146
Patents All Time

Issued Patents All Time

Showing 126–146 of 146 patents

Patent #TitleCo-InventorsDate
8460981 Use of contacts to create differential stresses on devices John J. Ellis-Monaghan, Jeffrey P. Gambino, Kirk D. Peterson, Jed H. Rankin 2013-06-11
8361872 High performance low power bulk FET device and method of manufacture Jin Cai, Toshiharu Furukawa 2013-01-29
8298904 Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture Joseph M. Lukaitis, Jed H. Rankin, Dustin K. Slisher, Timothy D. Sullivan 2012-10-30
8232151 Structure and method for manufacturing asymmetric devices Hasan M. Nayfeh, Andres Bryant, Arvind Kumar, Nivo Rovedo 2012-07-31
8232177 Method of generating uniformly aligned well and isolation regions in a substrate and resulting structure Wagdi W. Abadeer, Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, William R. Tonti 2012-07-31
8110483 Forming an extremely thin semiconductor-on-insulator (ETSOI) layer Wagdi W. Abadeer, Kiran V. Chatty, Jason E. Cummings, Toshiharu Furukawa, Robert J. Gauthier, Jr. +2 more 2012-02-07
8084822 Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, William R. Tonti 2011-12-27
8053870 Semiconductor structure incorporating multiple nitride layers to improve thermal dissipation away from a device and a method of forming the structure Brent A. Anderson, Joseph M. Lukaitis, Jed H. Rankin 2011-11-08
8034692 Structure and method for manufacturing asymmetric devices Hasan M. Nayfeh, Andres Bryant, Arvind Kumar, Nivo Rovedo 2011-10-11
8017489 Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed William F. Clark, Jr., Ephrem G. Gebgreselasie, Xuefeng Liu 2011-09-13
8008696 Band gap modulated optical sensor Kangguo Cheng, Toshiharu Furukawa, William R. Tonti 2011-08-30
7986022 Semispherical integrated circuit structures Kangguo Cheng, Toshiharu Furukawa, William R. Tonti, Richard Q. Williams 2011-07-26
7977201 Methods for forming back-end-of-line resistive semiconductor structures Wagdi W. Abadeer, Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, Yun Shi +1 more 2011-07-12
7939911 Back-end-of-line resistive semiconductor structures Wagdi W. Abadeer, Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, Yun Shi +1 more 2011-05-10
7936017 Reduced floating body effect without impact on performance-enhancing stress William F. Clark, Jr., Toshiharu Furukawa, Xuefeng Hua, Charles W. Koburger, III 2011-05-03
7888266 Band gap modulated optical sensor Kangguo Cheng, Toshiharu Furukawa, William R. Tonti 2011-02-15
7855110 Field effect transistor and method of fabricating same Viorel Ontalus 2010-12-21
7808039 SOI transistor with merged lateral bipolar transistor Jin Cai, Jeffrey B. Johnson, Tak H. Ning 2010-10-05
7790564 Methods for fabricating active devices on a semiconductor-on-insulator substrate utilizing multiple depth shallow trench isolations Wagdi W. Abadeer, Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, William R. Tonti 2010-09-07
7737498 Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, William R. Tonti 2010-06-15
7709926 Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit Wagdi W. Abadeer, Kiran V. Chatty, Robert J. Gauthier, Jr., Jed H. Rankin, William R. Tonti 2010-05-04