Issued Patents All Time
Showing 201–225 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10381355 | Dense vertical field effect transistor structure | Kangguo Cheng, Zhenxing Bi, Juntao Li | 2019-08-13 |
| 10381476 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-08-13 |
| 10374089 | Tensile strain in NFET channel | Kangguo Cheng, Juntao Li, Heng Wu | 2019-08-06 |
| 10366928 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie | 2019-07-30 |
| 10361125 | Methods and structures for forming uniform fins when using hardmask patterns | Kangguo Cheng, Yann Mignot, Choonghyun Lee | 2019-07-23 |
| 10361285 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Xuefeng Liu, Yongan Xu | 2019-07-23 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-07-23 |
| 10361308 | Self-aligned gate cut with polysilicon liner oxidation | Kangguo Cheng | 2019-07-23 |
| 10350856 | Corrosion and wear resistant coating on zirconium alloy cladding | Lu Cai | 2019-07-16 |
| 10347727 | Fin-type FET with low source or drain contact resistance | Kangguo Cheng, Juntao Li, Heng Wu | 2019-07-09 |
| 10347731 | Transistor with asymmetric spacers | Zhenxing Bi, Kangguo Cheng, Heng Wu | 2019-07-09 |
| 10347743 | Vertical transport fin field effect transistor (VT FinFET) having an uniform L-shaped inner spacer | Kangguo Cheng, Juntao Li, Jingyun Zhang | 2019-07-09 |
| 10347744 | Method and structure of forming FinFET contact | Kangguo Cheng | 2019-07-09 |
| 10347537 | Forming insulator fin structure in isolation region to support gate structures | Kangguo Cheng | 2019-07-09 |
| 10332799 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-06-25 |
| 10332880 | Vertical fin resistor devices | Zhenxing Bi, Kangguo Cheng | 2019-06-25 |
| 10332983 | Vertical field-effect transistors including uniform gate lengths | Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu | 2019-06-25 |
| 10332986 | Formation of inner spacer on nanosheet MOSFET | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-06-25 |
| 10332995 | Reduced resistance source and drain extensions in vertical field effect transistors | Chun Wing Yeung, Chen Zhang | 2019-06-25 |
| 10332999 | Method and structure of forming fin field-effect transistor without strain relaxation | Kangguo Cheng, Juntao Li, Choonghyun Lee, Heng Wu | 2019-06-25 |
| 10332802 | Hybrid-channel nano-sheets FETs | Zhenxing Bi, Kangguo Cheng, Wenyu Xu | 2019-06-25 |
| 10325817 | Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-06-18 |
| 10326022 | Self-aligned gate cut with polysilicon liner oxidation | Kangguo Cheng | 2019-06-18 |
| 10319813 | Nanosheet CMOS transistors | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-06-11 |
| 10319717 | Forming on-chip metal-insulator-semiconductor capacitor with pillars | Zhenxing Bi, Kangguo Cheng, Chen Zhang | 2019-06-11 |