Issued Patents All Time
Showing 176–200 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10453843 | Multiple finFET Formation with epitaxy separation | Kangguo Cheng, Juntao Li | 2019-10-22 |
| 10446686 | Asymmetric dual gate fully depleted transistor | Terry Hook, Kangguo Cheng, Yi Song, Chen Zhang, Xin Miao | 2019-10-15 |
| 10446664 | Inner spacer formation and contact resistance reduction in nanosheet transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2019-10-15 |
| 10446647 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-10-15 |
| 10446276 | Method of manufacturing a SiC composite fuel cladding with inner Zr alloy liner | Edward J. Lahoda | 2019-10-15 |
| 10439044 | Method and structure of fabricating I-shaped silicon germanium vertical field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2019-10-08 |
| 10438855 | Dual channel FinFETs having uniform fin heights | Zhenxing Bi, Kangguo Cheng, Jie Yang | 2019-10-08 |
| 10431667 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Xin Miao, Heng Wu | 2019-10-01 |
| 10431660 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2019-10-01 |
| 10431646 | Electronic devices having spiral conductive structures | Kangguo Cheng, Xuefeng Liu, Chi-Chun Liu, Yongan Xu | 2019-10-01 |
| 10424482 | Methods and structures for forming a tight pitch structure | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2019-09-24 |
| 10411114 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Xin Miao, Wenyu Xu | 2019-09-10 |
| 10411106 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Xin Miao, Chen Zhang | 2019-09-10 |
| 10411094 | Method and structure for forming silicon germanium FinFET | Kangguo Cheng, Juntao Li, Heng Wu | 2019-09-10 |
| 10410928 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu | 2019-09-10 |
| 10403716 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-09-03 |
| 10396179 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Xuefeng Liu, Yongan Xu | 2019-08-27 |
| 10396172 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Xin Miao, Chen Zhang | 2019-08-27 |
| 10396151 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2019-08-27 |
| 10395994 | Equal spacer formation on semiconductor device | Heng Wu, Juntao Li, Kangguo Cheng, Choonghyun Lee | 2019-08-27 |
| 10388572 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Heng Wu | 2019-08-20 |
| 10388570 | Substrate with a fin region comprising a stepped height structure | Kangguo Cheng | 2019-08-20 |
| 10388569 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Heng Wu | 2019-08-20 |
| 10381262 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Heng Wu | 2019-08-13 |
| 10381267 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Kangguo Cheng, Chi-Chun Liu | 2019-08-13 |