Issued Patents All Time
Showing 126–150 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10665511 | Self-limiting liners for increasing contact trench volume in N-type and P-type transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-05-26 |
| 10665505 | Self-aligned gate contact isolation | Kangguo Cheng, Ekmini Anuja De Silva, Ruilong Xie | 2020-05-26 |
| 10658473 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, John R. Sporre | 2020-05-19 |
| 10651378 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-05-12 |
| 10644108 | Strained and unstrained semiconductor device features formed on the same substrate | Kangguo Cheng, Juntao Li | 2020-05-05 |
| 10636887 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-04-28 |
| 10636709 | Semiconductor fins with dielectric isolation at fin bottom | Kangguo Cheng, Jay William Strane | 2020-04-28 |
| 10629589 | Resistor fins | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-04-21 |
| 10622208 | Lateral semiconductor nanotube with hexagonal shape | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-04-14 |
| 10608100 | Unipolar spacer formation for finFETs | Kangguo Cheng, Jie Yang | 2020-03-31 |
| 10608096 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2020-03-31 |
| 10600889 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-03-24 |
| 10593802 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2020-03-17 |
| 10586737 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-03-10 |
| 10573566 | Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels | Zhenxing Bi, Kangguo Cheng, Jie Yang | 2020-02-25 |
| 10573561 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Heng Wu | 2020-02-25 |
| 10566430 | Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts | Kangguo Cheng | 2020-02-18 |
| 10566095 | Cold spray chromium coating for nuclear fuel rods | Edward J. Lahoda, Zeses Karoutas, Sumit Ray, Kumar Sridharan, Benjamin Maier +1 more | 2020-02-18 |
| 10564125 | Self-aligned nanotips with tapered vertical sidewalls | Juntao Li, Kangguo Cheng, Heng Wu | 2020-02-18 |
| 10559685 | Vertical field effect transistor with reduced external resistance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-02-11 |
| 10559675 | Stacked silicon nanotubes | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-02-11 |
| 10559491 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Heng Wu | 2020-02-11 |
| 10553691 | Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts | Kangguo Cheng | 2020-02-04 |
| 10553682 | Vertical transistors with multiple gate lengths | Zhenxing Bi, Kangguo Cheng, Zheng Xu | 2020-02-04 |
| 10553495 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-02-04 |