Issued Patents All Time
Showing 76–100 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10950505 | Multiple finFET formation with epitaxy separation | Kangguo Cheng | 2021-03-16 |
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Heng Wu | 2021-03-16 |
| 10948398 | System and method for detecting non-contact repellency of a compound candidate from Drosophila | — | 2021-03-16 |
| 10937866 | Method and structure for forming silicon germanium FinFET | Kangguo Cheng, Juntao Li, Heng Wu | 2021-03-02 |
| 10937792 | Dense vertical field effect transistor structure | Kangguo Cheng, Zhenxing Bi, Juntao Li | 2021-03-02 |
| 10937703 | Field-effect transistor having dual channels | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-03-02 |
| 10925913 | Low toxic tripterygium neoglycosides, preparation method and application thereof | Bo Liu, Wei Mao, Xusheng Liu, Xiaodong Han, Wen-Li Zhou +10 more | 2021-02-23 |
| 10930563 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Heng Wu | 2021-02-23 |
| 10916657 | Tensile strain in NFET channel | Kangguo Cheng, Juntao Li, Heng Wu | 2021-02-09 |
| 10916649 | Vertical field effect transistor with reduced external resistance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2021-02-09 |
| 10903337 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-01-26 |
| 10896854 | Forming fins utilizing alternating pattern of spacers | Kangguo Cheng | 2021-01-19 |
| 10890560 | Forming nanoscale pores in a semiconductor structure utilizing nanotubes as a sacrificial template | Juntao Li, Kangguo Cheng, Zhenxing Bi | 2021-01-12 |
| 10892325 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2021-01-12 |
| 10892324 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2021-01-12 |
| 10886169 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Ekmini Anuja De Silva, Juntao Li, Yi Song | 2021-01-05 |
| 10854753 | Uniform fin dimensions using fin cut hardmask | Kangguo Cheng | 2020-12-01 |
| 10840349 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2020-11-17 |
| 10832955 | Methods and structures for forming uniform fins when using hardmask patterns | Kangguo Cheng, Yann Mignot, Choonghyun Lee | 2020-11-10 |
| 10832970 | Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2020-11-10 |
| 10832962 | Formation of an air gap spacer using sacrificial spacer layer | Kangguo Cheng, Choonghyun Lee | 2020-11-10 |
| 10803999 | Coated U3Si2 pellets with enhanced water and steam oxidation resistance | Edward J. Lahoda, Lu Cai | 2020-10-13 |
| 10784333 | Electronic devices having spiral conductive structures | Kangguo Cheng, Xuefeng Liu, Chi-Chun Liu, Yongan Xu | 2020-09-22 |
| 10784148 | Forming uniform fin height on oxide substrate | Kangguo Cheng | 2020-09-22 |
| 10784363 | Method and structure of forming finFET contact | Kangguo Cheng | 2020-09-22 |