Issued Patents All Time
Showing 26–50 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11443857 | Cold spray chromium coating for nuclear fuel rods | Edward J. Lahoda, Zeses Karoutas, Sumit Ray, Kumar Sridharan, Benjamin Maier +1 more | 2022-09-13 |
| 11362193 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu | 2022-06-14 |
| 11355588 | Strained and unstrained semiconductor device features formed on the same substrate | Kangguo Cheng, Juntao Li | 2022-06-07 |
| 11342230 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu | 2022-05-24 |
| 11335773 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2022-05-17 |
| 11329143 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2022-05-10 |
| 11302799 | Method and structure for forming a vertical field-effect transistor | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2022-04-12 |
| 11276612 | Hybrid-channel nano-sheet FETS | Zhenxing Bi, Kangguo Cheng, Wenyu Xu | 2022-03-15 |
| 11251267 | Vertical transistors with multiple gate lengths | Zhenxing Bi, Kangguo Cheng, Zheng Xu | 2022-02-15 |
| 11222981 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet | 2022-01-11 |
| 11195912 | Inner spacer for nanosheet transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-12-07 |
| 11189729 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2021-11-30 |
| 11183577 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2021-11-23 |
| 11183593 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet | 2021-11-23 |
| 11183430 | Self-limiting liners for increasing contact trench volume in n-type and p-type transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-11-23 |
| 11164959 | VFET devices with ILD protection | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-11-02 |
| 11158730 | Formation of inner spacer on nanosheet MOSFET | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-10-26 |
| 11142770 | Isolated oleaginous yeast | Gregory Stephanopoulos, Kangjian Qiao | 2021-10-12 |
| 11145425 | Grain boundary enhanced UN and U3Si2 pellets with improved oxidation resistance | Edward J. Lahoda, Robert L. Oelrich, Jr., Hemant Shah, Jonathan WRIGHT, Lu Cai | 2021-10-12 |
| 11145508 | Forming a fin cut in a hardmask | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-10-12 |
| 11120991 | Lateral semiconductor nanotube with hexagonal shape | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2021-09-14 |
| 11101182 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-08-24 |
| 11094824 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2021-08-17 |
| 11069577 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-07-20 |
| 11063129 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-07-13 |