Issued Patents All Time
Showing 51–75 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11049940 | Method and structure for forming silicon germanium finFET | Kangguo Cheng, Juntao Li, Heng Wu | 2021-06-29 |
| 11049953 | Nanosheet transistor | Kangguo Cheng, Juntao Li, Heng Wu | 2021-06-29 |
| 11049622 | Method to pressurize sic fuel cladding tube before end plug sealing by pressurization pushing spring loaded end plug | Robert L. Oelrich, Jr. | 2021-06-29 |
| 11043429 | Semiconductor fins with dielectric isolation at fin bottom | Kangguo Cheng, Jay William Strane | 2021-06-22 |
| 11043308 | Duplex accident tolerant coating for nuclear fuel rods | Edward J. Lahoda, Robert L. Oelrich, Jr., Kumar Sridharan, Benjamin Maier, Greg Johnson | 2021-06-22 |
| 11024547 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-06-01 |
| 11011432 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-05-18 |
| 11011643 | Nanosheet FET including encapsulated all-around source/drain contact | Chun Wing Yeung, Chen Zhang | 2021-05-18 |
| 11011622 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-05-18 |
| 11011617 | Formation of a partial air-gap spacer | Choonghyun Lee, Kangguo Cheng, Heng Wu | 2021-05-18 |
| 11004944 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, John R. Sporre | 2021-05-11 |
| 11004737 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Kangguo Cheng, Chi-Chun Liu | 2021-05-11 |
| 10991797 | Self-aligned two-dimensional material transistors | Chen Zhang, Chun Wing Yeung | 2021-04-27 |
| 10991584 | Methods and structures for cutting lines or spaces in a tight pitch structure | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-04-27 |
| 10985315 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-04-20 |
| 10985279 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Juntao Li, Zhenxing Bi | 2021-04-20 |
| 10985250 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, John R. Sporre | 2021-04-20 |
| 10985062 | Self-aligned contact cap | Kangguo Cheng | 2021-04-20 |
| 10984919 | Deposition of integrated protective material into zirconium cladding for nuclear reactors by high-velocity thermal application | Jason P. Mazzoccoli, Edward J. Lahoda | 2021-04-20 |
| 10978572 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-04-13 |
| 10978571 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-04-13 |
| 10971584 | Low contact resistance nanowire FETs | Juntao Li, Choonghyun Lee, Kangguo Cheng | 2021-04-06 |
| 10971490 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet | 2021-04-06 |
| 10957778 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2021-03-23 |
| 10957599 | Integrating extra gate VFET with single gate VFET | Zhenxing Bi, Kangguo Cheng, Junli Wang | 2021-03-23 |