Issued Patents All Time
Showing 251–275 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10236290 | Method and structure for improving vertical transistor | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-03-19 |
| 10236346 | Transistor having a high germanium percentage fin channel and a gradient source/drain junction doping profile | Zhenxing Bi, Kangguo Cheng, Chen Zhang | 2019-03-19 |
| 10229985 | Vertical field-effect transistor with uniform bottom spacer | Juntao Li, Kangguo Cheng, Heng Wu | 2019-03-12 |
| 10229983 | Methods and structures for forming field-effect transistors (FETs) with low-k spacers | Huiming Bu, Kangguo Cheng | 2019-03-12 |
| 10224431 | Wrapped source/drain contacts with enhanced area | Kangguo Cheng, Zuoguang Liu, Heng Wu | 2019-03-05 |
| 10224246 | Multi-layer filled gate cut to prevent power rail shorting to gate structure | Kangguo Cheng, Hao Tang | 2019-03-05 |
| 10217707 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-02-26 |
| 10217867 | Uniform fin dimensions using fin cut hardmask | Kangguo Cheng | 2019-02-26 |
| 10217841 | Forming an uniform L-shaped inner spacer for a vertical transport fin field effect transistor (VT FinFET) | Kangguo Cheng, Juntao Li, Jingyun Zhang | 2019-02-26 |
| 10211302 | Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts | Kangguo Cheng | 2019-02-19 |
| 10211288 | Vertical transistors with multiple gate lengths | Zhenxing Bi, Kangguo Cheng, Zheng Xu | 2019-02-19 |
| 10170595 | Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch | Kangguo Cheng | 2019-01-01 |
| 10170596 | Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch | Kangguo Cheng | 2019-01-01 |
| 10170590 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Xin Miao, Heng Wu | 2019-01-01 |
| 10170586 | Unipolar spacer formation for finFETs | Kangguo Cheng, Jie Yang | 2019-01-01 |
| 10170618 | Vertical transistor with reduced gate-induced-drain-leakage current | Kangguo Cheng, Xin Miao, Chen Zhang | 2019-01-01 |
| 10163721 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie | 2018-12-25 |
| 10164007 | Transistor with improved air spacer | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-12-25 |
| 10164056 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Xin Miao, Heng Wu | 2018-12-25 |
| 10157745 | High aspect ratio gates | Kangguo Cheng, Sivananda K. Kanakasabapathy | 2018-12-18 |
| 10147635 | Different shallow trench isolation fill in fin and non-fin regions of finFET | Kangguo Cheng, Chen Zhang | 2018-12-04 |
| 10147651 | Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels | Zhenxing Bi, Kangguo Cheng, Jie Yang | 2018-12-04 |
| 10147808 | Techniques for forming vertical tunneling FETS | Juntao Li, Kangguo Cheng, Xin Miao | 2018-12-04 |
| 10141313 | FinFET with uniform shallow trench isolation recess | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-11-27 |
| 10141420 | Transistors with dielectric-isolated source and drain regions | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2018-11-27 |