Issued Patents All Time
Showing 301–325 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10002925 | Strained semiconductor device | Kangguo Cheng | 2018-06-19 |
| 10002795 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-06-19 |
| 10002868 | Vertical fin resistor devices | Zhenxing Bi, Kangguo Cheng | 2018-06-19 |
| 10002923 | Techniques for forming finFET transistors with same fin pitch and different source/drain epitaxy configurations | Kangguo Cheng | 2018-06-19 |
| 9991365 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Xuefeng Liu, Yongan Xu | 2018-06-05 |
| 9984937 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-05-29 |
| 9985107 | Method and structure for forming MOSFET with reduced parasitic capacitance | Kangguo Cheng, Chen Zhang | 2018-05-29 |
| 9984919 | Inverted damascene interconnect structures | Xunyuan Zhang, Chanro Park, Yongan Xu, Yann Mignot | 2018-05-29 |
| 9972542 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Kangguo Cheng, Wenyu Xu | 2018-05-15 |
| 9947740 | On-chip MIM capacitor | Kangguo Cheng | 2018-04-17 |
| 9947548 | Self-aligned single dummy fin cut with tight pitch | Kangguo Cheng, Cheng Chi, Chi-Chun Liu | 2018-04-17 |
| 9941352 | Transistor with improved air spacer | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-04-10 |
| 9935015 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie | 2018-04-03 |
| 9935195 | Reduced resistance source and drain extensions in vertical field effect transistors | Chun Wing Yeung, Chen Zhang | 2018-04-03 |
| 9935102 | Method and structure for improving vertical transistor | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-04-03 |
| 9929046 | Self-aligned contact cap | Kangguo Cheng | 2018-03-27 |
| 9929256 | Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch | Kangguo Cheng | 2018-03-27 |
| 9923083 | Embedded endpoint fin reveal | Kangguo Cheng | 2018-03-20 |
| 9917154 | Strained and unstrained semiconductor device features formed on the same substrate | Kangguo Cheng, Juntao Li | 2018-03-13 |
| 9899372 | Forming on-chip metal-insulator-semiconductor capacitor | Zhenxing Bi, Kangguo Cheng, Chen Zhang | 2018-02-20 |
| 9893181 | Uniform gate length in vertical field effect transistors | Kangguo Cheng | 2018-02-13 |
| 9892976 | Forming a hybrid channel nanosheet semiconductor structure | Kangguo Cheng | 2018-02-13 |
| 9881839 | Forming a hybrid channel nanosheet semiconductor structure | Kangguo Cheng | 2018-01-30 |
| 9870948 | Forming insulator fin structure in isolation region to support gate structures | Kangguo Cheng | 2018-01-16 |
| 9865598 | FinFET with uniform shallow trench isolation recess | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-01-09 |