Issued Patents All Time
Showing 326–350 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853131 | Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch | Kangguo Cheng | 2017-12-26 |
| 9844923 | Corrosion and wear resistant coating on zirconium alloy cladding | Lu Cai | 2017-12-19 |
| 9837403 | Asymmetrical vertical transistor | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-12-05 |
| 9837407 | Semiconductor device with increased source/drain area | Kangguo Cheng, Chi-Chun Liu, Jie Yang | 2017-12-05 |
| 9837408 | Forming strained and unstrained features on a substrate | Zhenxing Bi, Kangguo Cheng, Zheng Xu | 2017-12-05 |
| 9818875 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-11-14 |
| 9812553 | Unipolar spacer formation for finFETs | Kangguo Cheng, Jie Yang | 2017-11-07 |
| 9805983 | Multi-layer filled gate cut to prevent power rail shorting to gate structure | Kangguo Cheng, Hao Tang | 2017-10-31 |
| 9773893 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2017-09-26 |
| 9773870 | Strained semiconductor device | Kangguo Cheng | 2017-09-26 |
| 9761450 | Forming a fin cut in a hardmask | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-09-12 |
| 9754798 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie | 2017-09-05 |
| 9748245 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Juntao Li | 2017-08-29 |
| 9748381 | Pillar formation for heat dissipation and isolation in vertical field effect transistors | Zhenxing Bi, Kangguo Cheng, Chen Zhang | 2017-08-29 |
| 9735253 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-08-15 |
| 9728635 | Uniform gate length in vertical field effect transistors | Kangguo Cheng | 2017-08-08 |
| 9721897 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Xin Miao, Chen Zhang | 2017-08-01 |
| 9721676 | Deposition of a protective coating including metal-containing and chromium-containing layers on zirconium alloy for nuclear power applications | Jason P. Mazzoccoli, Sumit Ray, Carroll J. Long, Jr., Grant L. Eddy | 2017-08-01 |
| 9704859 | Forming semiconductor fins with self-aligned patterning | Kangguo Cheng, Fee Li Lie | 2017-07-11 |
| 9704863 | Forming a hybrid channel nanosheet semiconductor structure | Kangguo Cheng | 2017-07-11 |
| 9704994 | Different shallow trench isolation fill in fin and non-fin regions of finFET | Kangguo Cheng, Chen Zhang | 2017-07-11 |
| 9704856 | On-chip MIM capacitor | Kangguo Cheng | 2017-07-11 |
| 9685440 | Forming fins utilizing alternating pattern of spacers | Kangguo Cheng | 2017-06-20 |
| 9647120 | Vertical FET symmetric and asymmetric source/drain formation | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-05-09 |
| 9614087 | Strained vertical field-effect transistor (FET) and method of forming the same | Kangguo Cheng, Juntao Li | 2017-04-04 |