Issued Patents All Time
Showing 1,876–1,900 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570299 | Formation of SiGe nanotubes | Hong He, Ali Khakifirooz, Juntao Li | 2017-02-14 |
| 9570591 | Forming semiconductor device with close ground rules | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-02-14 |
| 9570583 | Recessing RMG metal gate stack for forming self-aligned contact | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie | 2017-02-14 |
| 9570297 | Elimination of defects in long aspect ratio trapping trench structures | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-02-14 |
| 9570575 | Capacitor in strain relaxed buffer | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-02-14 |
| 9570571 | Gate stack integrated metal resistors | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-02-14 |
| 9570551 | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-02-14 |
| 9570465 | Dual STI integrated circuit including FDSOI transistors and method for manufacturing the same | Maud Vinet, Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec +1 more | 2017-02-14 |
| 9570450 | Hybrid logic and SRAM contacts | Veeraraghavan S. Basker, Ali Khakifirooz | 2017-02-14 |
| 9570444 | CMOS transistors with identical active semiconductor region shapes | Veeraraghavan S. Basker, Ali Khakifirooz | 2017-02-14 |
| 9570443 | Field effect transistor including strained germanium fins | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-02-14 |
| 9570403 | Secure chip with physically unclonable function | Qing Cao, Fei Liu | 2017-02-14 |
| 9570360 | Dual channel material for finFET for high performance CMOS | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-02-14 |
| 9570356 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-02-14 |
| 9570300 | Strain relaxed buffer layers with virtually defect free regions | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-02-14 |
| 9564443 | Dynamic random access memory cell with self-aligned strap | John E. Barth, Jr., Herbert L. Ho, Ali Khakifirooz, Ravikumar Ramachandran, Kern Rim +1 more | 2017-02-07 |
| 9564486 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Bruce B. Doris, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2017-02-07 |
| 9564445 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz, Babar A. Khan +4 more | 2017-02-07 |
| 9564439 | Structure and method for advanced bulk fin isolation | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-02-07 |
| 9564437 | Method and structure for forming FinFET CMOS with dual doped STI regions | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-02-07 |
| 9564428 | Forming metal-insulator-metal capacitor | Veeraraghavan S. Basker | 2017-02-07 |
| 9564373 | Forming a CMOS with dual strained channels | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-02-07 |
| 9564358 | Forming reliable contacts on tight semiconductor pitch | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2017-02-07 |
| 9564326 | Lithography using interface reaction | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-02-07 |
| 9557290 | Nanochannel electrode devices | Joseph Ervin, Juntao Li, Chengwen Pei, Geng Wang | 2017-01-31 |