Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10957536 | Removal of trilayer resist without damage to underlying structure | Muthumanickam Sankarapandian, Soon-Cheon Seo, John R. Sporre | 2021-03-23 |
| 10903124 | Transistor structure with n/p boundary buffer | Romain Lallement, Ruqiang Bao | 2021-01-26 |
| 10832945 | Techniques to improve critical dimension width and depth uniformity between features with different layout densities | Nicole Saulnier, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie +3 more | 2020-11-10 |
| 10804106 | High temperature ultra-fast annealed soft mask for semiconductor devices | Mona A. Ebrish, Oleg Gluschenkov, Ekmini Anuja De Silva | 2020-10-13 |
| 10699912 | Damage free hardmask strip | Ekmini Anuja De Silva | 2020-06-30 |
| 10665461 | Semiconductor device with multiple threshold voltages | Praveen Joseph, Ekmini Anuja De Silva | 2020-05-26 |
| 10656527 | Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer | Ekmini Anuja De Silva, Jing Guo, Ashim Dutta, Nelson Felix | 2020-05-19 |
| 10658521 | Enabling residue free gap fill between nanosheets | Ekmini Anuja De Silva, Jing Guo, Ruqiang Bao, Muthumanickam Sankarapandian, Nelson Felix | 2020-05-19 |
| 10629495 | Low undercut N-P work function metal patterning in nanosheet replacement metal gate process | Ekmini Anuja De Silva, Jing Guo, Romain Lallement, Ruqiang Bao, Zhenxing Bi +1 more | 2020-04-21 |
| 10395925 | Patterning material film stack comprising hard mask layer having high metal content interface to resist layer | Ekmini Anuja De Silva, Adra Carr, Shanti Pancharatnam, Yasir Sulehria | 2019-08-27 |
| 10381348 | Structure and method for equal substrate to channel height between N and P fin-FETs | Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Gauri Karve, Fee Li Lie +2 more | 2019-08-13 |
| 10361127 | Vertical transport FET with two or more gate lengths | Gauri Karve, Fee Li Lie, Mona A. Ebrish, Leigh Anne H. Clevenger, Ekmini Anuja De Silva +1 more | 2019-07-23 |
| 10361129 | Self-aligned double patterning formed fincut | Stuart A. Sieg, Yann Mignot, Christopher J. Waskiewicz, Hemanth Jagannathan, Eric R. Miller | 2019-07-23 |
| 10304744 | Inverse tone direct print EUV lithography enabled by selective material deposition | Praveen Joseph, Ekmini Anuja De Silva, Fee Li Lie, Stuart A. Sieg, Yann Mignot | 2019-05-28 |
| 10276452 | Low undercut N-P work function metal patterning in nanosheet replacement metal gate process | Ekmini Anuja De Silva, Jing Guo, Romain Lallement, Ruqiang Bao, Zhenxing Bi +1 more | 2019-04-30 |
| 10254652 | Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning | Ekmini Anuja De Silva, Karen E. Petrillo | 2019-04-09 |
| 10176997 | Direct gate patterning for vertical transport field effect transistor | Ekmini Anuja De Silva, Stuart A. Sieg, Wenyu Xu | 2019-01-08 |
| 10082736 | Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning | Ekmini Anuja De Silva, Karen E. Petrillo | 2018-09-25 |
| 10049876 | Removal of trilayer resist without damage to underlying structure | Muthumanickam Sankarapandian, Soon-Cheon Seo, John R. Sporre | 2018-08-14 |
| 9799534 | Application of titanium-oxide as a patterning hardmask | Abraham Arceo de la Pena, Ekmini Anuja De Silva, Nelson Felix, Sivananda K. Kanakasabapathy | 2017-10-24 |