EA

Emre Alptekin

IBM: 61 patents #1,284 of 70,183Top 2%
Globalfoundries: 16 patents #218 of 4,424Top 5%
Apple: 6 patents #4,753 of 18,612Top 30%
TE Tessera: 2 patents #162 of 271Top 60%
SS Stmicroelectronics Sa: 1 patents #938 of 1,676Top 60%
📍 San Jose, CA: #377 of 32,062 inventorsTop 2%
🗺 California: #3,181 of 386,348 inventorsTop 1%
Overall (All Time): #20,958 of 4,157,543Top 1%
83
Patents All Time

Issued Patents All Time

Showing 51–75 of 83 patents

Patent #TitleCo-InventorsDate
9368493 Method and structure to suppress FinFET heating Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega 2016-06-14
9349836 Fin end spacer for preventing merger of raised active regions Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega 2016-05-24
9337041 Anisotropic dielectric material gate spacer for a field effect transistor Hari V. Mallela, Reinaldo Vega 2016-05-10
9331166 Selective dielectric spacer deposition for exposing sidewalls of a finFET Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega 2016-05-03
9318323 Semiconductor devices with graphene nanoribbons Viraj Y. Sardesai, Reinaldo Vega 2016-04-19
9312185 Formation of metal resistor and e-fuse Cung D. Tran, Viraj Y. Sardesai, Reinaldo Vega 2016-04-12
9305835 Formation of air-gap spacer in transistor Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega 2016-04-05
9263454 Semiconductor structure having buried conductive elements Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Johnathan E. Faltermeier, Reinaldo Vega 2016-02-16
9245892 Semiconductor structure having buried conductive elements Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Johnathan E. Faltermeier, Reinaldo Vega 2016-01-26
9236345 Oxide mediated epitaxial nickel disilicide alloy contact formation Nicolas L. Breil, Christian Lavoie, Ahmet S. Ozcan, Kathryn T. Schonenberg 2016-01-12
9231072 Multi-composition gate dielectric field effect transistors Unoh Kwon, Wing L. Lai, Zhengwen Li, Vijay Narayanan, Ravikumar Ramachandran +1 more 2016-01-05
9190406 Fin field effect transistors having heteroepitaxial channels Wing L. Lai, Ravikumar Ramachandran, Matthew W. Stoker, Henry K. Utomo, Reinaldo Vega 2015-11-17
9111962 Selective dielectric spacer deposition for exposing sidewalls of a finFET Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran, Reinaldo Vega 2015-08-18
9059308 Method of manufacturing dummy gates of a different material as insulation between adjacent devices Gregory A. Northrop, Viraj Y. Sardesai, Cung D. Tran 2015-06-16
9059290 FinFET device formation Ravikumar Ramachandran, Viraj Y. Sardesai, Reinaldo Vega 2015-06-16
9034755 Method of epitaxially forming contact structures for semiconductor transistors Reinaldo Vega 2015-05-19
8999799 Maskless dual silicide contact formation Praneet Adusumilli, Kangguo Cheng, Shom Ponoth, Balasubramanian Pranatharthiharan 2015-04-07
8946081 Method for cleaning semiconductor substrate Ahmet S. Ozcan, Viraj Y. Sardesai, Cung D. Tran 2015-02-03
8927375 Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level Abhishek Dube, Henry K. Utomo, Reinaldo Vega, Bei Liu 2015-01-06
8927422 Raised silicide contact Nathaniel Berliner, Christian Lavoie, Kam-Leung Lee, Ahmet S. Ozcan 2015-01-06
8853862 Contact structures for semiconductor transistors Reinaldo Vega 2014-10-07
8815693 FinFET device formation Ravikumar Ramachandran, Viraj Y. Sardesai, Reinaldo Vega 2014-08-26
8796099 Inducing channel strain via encapsulated silicide formation Ahmet S. Ozcan, Viraj Y. Sardesai, Cung D. Tran 2014-08-05
8652963 MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture Bin Yang, Christian Lavoie, Ahmet S. Ozcan, Cung D. Tran, Mark V. Raymond 2014-02-18
8652914 Two-step silicide formation Sameer H. Jain, Reinaldo Vega 2014-02-18