Issued Patents All Time
Showing 26–50 of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9054207 | Field effect transistors for a flash memory comprising a self-aligned charge storage region | Thilo Scheiper, Uwe Griebenow, Jan Hoentschel | 2015-06-09 |
| 9040405 | Gate electrode with a shrink spacer | Tom Hasche, Gerhard Lembach, Alexander Ebermann | 2015-05-26 |
| 8987104 | Method of forming spacers that provide enhanced protection for gate electrode structures | Peter Baars, Jan Hoentschel, Thilo Scheiper | 2015-03-24 |
| 8951901 | Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry | Berthold Reimer, Falk Graetsch | 2015-02-10 |
| 8932930 | Enhancing integrity of a high-K gate stack by protecting a liner at the gate bottom during gate head exposure | Frank Seliger, Gunter Grasshoff | 2015-01-13 |
| 8916433 | Superior integrity of high-k metal gate stacks by capping STI regions | Thilo Scheiper, Peter Baars | 2014-12-23 |
| 8815741 | Method of forming a semiconductor structure including an implantation of ions into a layer of spacer material | Ralf Richter, Jan Hoentschel, Peter Javorka | 2014-08-26 |
| 8791509 | Multiple gate transistor having homogenously silicided fin end portions | Patrick Press, Rainer Giedigkeit, Jan Hoentschel | 2014-07-29 |
| 8786027 | Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage | Uwe Griebenow, Jan Hoentschel, Thilo Scheiper | 2014-07-22 |
| 8759960 | Semiconductor device comprising a stacked die configuration including an integrated Peltier element | Uwe Griebenow, Jan Hoentschel, Thilo Scheiper | 2014-06-24 |
| 8748281 | Enhanced confinement of sensitive materials of a high-K metal gate electrode structure | Jan Hoentschel, Thilo Scheiper, Uwe Griebenow | 2014-06-10 |
| 8735270 | Method for making high-K metal gate electrode structures by separate removal of placeholder materials | Klaus Hempel, Markus Lenski, Stephan Kruegel | 2014-05-27 |
| 8728924 | Gate electrodes of a semiconductor device formed by a hard mask and double exposure in combination with a shrink spacer | Andreas Hellmich, Steffen Laufer, Klaus Gebauer | 2014-05-20 |
| 8716136 | Method of forming a semiconductor structure including a wet etch process for removing silicon nitride | Berthold Reimer, Johannes von Kluge | 2014-05-06 |
| 8669151 | High-K metal gate electrode structures formed at different process stages of a semiconductor device | Jan Hoentschel, Thilo Scheiper, Uwe Griebenow | 2014-03-11 |
| 8664057 | High-K metal gate electrode structures formed by early cap layer adaptation | Rohit Pal, Andy Wei, Richard J. Carter | 2014-03-04 |
| 8653605 | Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum | Richard J. Carter, Joachim Metzger, Robert Binder | 2014-02-18 |
| 8652956 | High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning | Klaus Hempel, Thilo Scheiper, Stefanie Steiner | 2014-02-18 |
| 8536036 | Predoped semiconductor material for a high-K metal gate electrode structure of P- and N-channel transistors | Jan Hoentschel, Uwe Griebenow, Thilo Scheiper | 2013-09-17 |
| 8525289 | Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization | Richard J. Carter, Martin Trentzsch, Rohit Pal | 2013-09-03 |
| 8524591 | Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma | Rick Carter, Andreas Hellmich, Berthold Reimer | 2013-09-03 |
| 8508008 | Optical signal transfer in a semiconductor device by using monolithic opto-electronic components | Uwe Griebenow, Thilo Sheiper, Jan Hoentschel | 2013-08-13 |
| 8507348 | Field effect transistors for a flash memory comprising a self-aligned charge storage region | Thilo Scheiper, Uwe Griebenow, Jan Hoentschel | 2013-08-13 |
| 8455314 | Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage | Uwe Griebenow, Jan Hoentschel, Thilo Scheiper | 2013-06-04 |
| 8450163 | Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach | Klaus Hempel, Roland Stejskal, Andy Wei, Thilo Scheiper, Andreas Kurz +2 more | 2013-05-28 |