SK

Stephan Kronholz

Globalfoundries: 71 patents #23 of 4,424Top 1%
AM AMD: 7 patents #1,662 of 9,279Top 20%
IA Interroll Holding Ag: 2 patents #22 of 82Top 30%
NB Nproxx B.V.: 2 patents #3 of 14Top 25%
FG Forschungszentrum Jülich Gmbh: 1 patents #318 of 945Top 35%
📍 Hückelhoven, DE: #1 of 68 inventorsTop 2%
Overall (All Time): #20,995 of 4,157,543Top 1%
83
Patents All Time

Issued Patents All Time

Showing 51–75 of 83 patents

Patent #TitleCo-InventorsDate
8518784 Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment Thorsten Kammler, Gunda Beernink, Carsten Reichel 2013-08-27
8513080 Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device Berthold Reimes, Richard J. Carter, Fernando Luiz Koch, Gisela Schammler 2013-08-20
8513074 Reduced threshold voltage-width dependency and reduced surface topography in transistors comprising high-k metal gate electrode structures by a late carbon incorporation Peter Javorka 2013-08-20
8497180 Transistor with boot shaped source/drain regions Peter Javorka, Matthias Kessler, Roman Boschke 2013-07-30
8486786 Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process Martin Trentzsch, Richard J. Carter 2013-07-16
8486768 Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor material Andreas Kurz 2013-07-16
8481381 Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures Peter Javorka, Maciej Wiatr 2013-07-09
8466520 Transistor with an embedded strain-inducing material having a gradually shaped configuration Vassilios Papageorgiou, Gunda Beernink 2013-06-18
8460980 Transistor comprising an embedded semiconductor alloy in drain and source regions extending under the gate electrode Maciej Wiatr, Matthias Kessler 2013-06-11
8445378 Method of manufacturing a CMOS device including molecular storage elements in a via level Markus Lenski, Ralf Richter 2013-05-21
8440561 Three-dimensional semiconductor device comprising an inter-die connection on the basis of functional molecules Markus Lenski, Ralf Richter 2013-05-14
8377786 Methods for fabricating semiconductor devices Peter Javorka, Roman Boschke 2013-02-19
8361858 Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy Andreas Naumann, Gunda Beernink 2013-01-29
8357573 Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode Markus Lenski, Vassilios Papageorgiou 2013-01-22
8349694 Enhanced confinement of high-K metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloy Markus Lenski, Andy Wei, Martin Gerhardt 2013-01-08
8343826 Method for forming a transistor comprising high-k metal gate electrode structures including a polycrystalline semiconductor material and embedded strain-inducing semiconductor alloys Peter Javorka, Maciej Wiatr 2013-01-01
8338892 Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode Roman Boschke, Maciej Wiatr, Peter Javorka 2012-12-25
8338274 Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration Vassilios Papageorgiou, Gunda Beernink, Jan Hoentschel 2012-12-25
8334185 Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer Matthias Kessler, Ricardo Pablo. Mikalo 2012-12-18
8334573 Buried etch stop layer in trench isolation structures for superior surface planarity in densely packed semiconductor devices Maciej Wiatr, Markus Forsberg, Roman Boschke 2012-12-18
8324119 Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch process Carsten Reichel, Thorsten Kammler, Annekathrin Zeun 2012-12-04
8293596 Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growth Carsten Reichel, Annekathrin Zeun, Thorsten Kammler 2012-10-23
8283225 Enhancing selectivity during formation of a channel semiconductor alloy by a wet oxidation process Carsten Reichel, Falk Graetshe, Boris Bayha 2012-10-09
8258053 Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacers Matthias Kessler, Andreas Kurz 2012-09-04
8247282 Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process Carsten Reichel, Annekathrin Zeun, Martin Trentzsch 2012-08-21