Issued Patents All Time
Showing 26–50 of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8765542 | Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regions | Joachim Patzer, Frank Seliger, Markus Lenski | 2014-07-01 |
| 8748275 | Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topography | Hans-Juergen Thees, Maciej Wiatr | 2014-06-10 |
| 8735303 | Methods of forming PEET devices with different structures and performance characteristics | Hans-Juergen Thees, Peter Javorka | 2014-05-27 |
| 8735253 | Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process | Vassilios Papageorgiou, Martin Trentzsch | 2014-05-27 |
| 8728896 | Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etching | Andreas Ott, Ina Ostermay | 2014-05-20 |
| 8722486 | Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantation | Maciej Wiatr, Roman Boschke, Peter Javorka | 2014-05-13 |
| 8722481 | Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures | Peter Javorka, Maciej Wiatr | 2014-05-13 |
| 8722479 | Method of protecting STI structures from erosion during processing operations | Hans-Juergen Thees, Joerg Radecker | 2014-05-13 |
| 8703620 | Methods for PFET fabrication using APM solutions | Joanna Wasyluk, Berthold Reimer, Sven Metzger, Gregory Nowling, John Foster +1 more | 2014-04-22 |
| 8703551 | Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatter | Andreas Ott | 2014-04-22 |
| 8674458 | Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process | Rohit Pal, Gunda Beernink | 2014-03-18 |
| 8674416 | Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region | Carsten Reichel, Thorsten Kammler, Annekathrin Zeun | 2014-03-18 |
| 8673710 | Formation of a channel semiconductor alloy by a nitride hard mask layer and an oxide mask | Rohit Pal | 2014-03-18 |
| 8673668 | Test structure for controlling the incorporation of semiconductor alloys in transistors comprising high-k metal gate electrode structures | Maciej Wiatr, Rainer Giedigkeit | 2014-03-18 |
| 8664066 | Formation of a channel semiconductor alloy by forming a nitride based hard mask layer | Rohit Pal | 2014-03-04 |
| 8664049 | Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material | Roman Boschke, Vassilios Papageorgiou, Maciej Wiatr | 2014-03-04 |
| 8658543 | Methods for pFET fabrication using APM solutions | Joanna Wasyluk, Yew Tuck Chow, Richard J. Carter, Berthold Reimer, Kai Tern Sih | 2014-02-25 |
| 8652917 | Superior stability of characteristics of transistors having an early formed high-K metal gate | Markus Lenski, Nadja Zakowsky | 2014-02-18 |
| 8642419 | Methods of forming isolation structures for semiconductor devices | Jorg Radecker, Hans-Juergen Thees, Peter Javorka | 2014-02-04 |
| 8623742 | Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices | Matthias Kessler, Thomas Feudel | 2014-01-07 |
| 8614122 | Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning process | Gunda Beernink, Carsten Reichel | 2013-12-24 |
| 8609498 | Transistor with embedded Si/Ge material having reduced offset and superior uniformity | Peter Javorka, Roman Boschke | 2013-12-17 |
| 8609482 | Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process | Carsten Reichel, Annekathrin Zeun, Martin Trentzsch | 2013-12-17 |
| 8541281 | Replacement gate process flow for highly scaled semiconductor devices | Ines Becker | 2013-09-24 |
| 8536009 | Differential threshold voltage adjustment in PMOS transistors by differential formation of a channel semiconductor material | Peter Javorka, Maciej Wiatr | 2013-09-17 |