Issued Patents All Time
Showing 76–100 of 131 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10685881 | Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device | Hui Zang, Guowei Xu | 2020-06-16 |
| 10651173 | Single diffusion cut for gate structures | Guowei Xu, Hui Zang, Ruilong Xie | 2020-05-12 |
| 10636890 | Chamfered replacement gate structures | Rongtao Lu, Chih-Chiang Chang, Guowei Xu, Hui Zang, Scott Beasor +1 more | 2020-04-28 |
| 10629694 | Gate contact and cross-coupling contact formation | Hui Zang, Ruilong Xie, Scott Beasor | 2020-04-21 |
| 10629739 | Methods of forming spacers adjacent gate structures of a transistor device | Hui Zang, Chung Foong Tan, Guowei Xu, Yue Zhong, Ruilong Xie +2 more | 2020-04-21 |
| 10600914 | Isolation pillar first gate structures and methods of forming same | Wei Zhao, Ming Hao Tang, Rui Chen, Yuping Ren, Hui Zang +2 more | 2020-03-24 |
| 10593757 | Integrated circuits having converted self-aligned epitaxial etch stop | Jiehui Shu, Ruilong Xie, Hui Zang | 2020-03-17 |
| 10586860 | Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process | Jiehui Shu, Laertis Economikos, Xusheng Wu, John H. Zhang, Haigou Huang +4 more | 2020-03-10 |
| 10586736 | Hybrid fin cut with improved fin profiles | Ruilong Xie, Shesh Mani Pandey, Hui Zang, Garo Derderian, Scott Beasor | 2020-03-10 |
| 10580685 | Integrated single diffusion break | Hui Zang, Hong Yu, Laertis Economikos | 2020-03-03 |
| 10580701 | Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit products | Hui Zang, Scott Beasor | 2020-03-03 |
| 10535771 | Method for forming replacement air gap | Laertis Economikos, Shesh Mani Pandey, Hui Zang, Jinping Liu | 2020-01-14 |
| 10522644 | Different upper and lower spacers for contact | Guowei Xu, Hui Zang, Scott Beasor | 2019-12-31 |
| 10522538 | Using source/drain contact cap during gate cut | Shesh Mani Pandey, Jiehui Shu, Laertis Economikos, Hui Zang, Ruilong Xie +2 more | 2019-12-31 |
| 10522410 | Performing concurrent diffusion break, gate and source/drain contact cut etch processes | Laertis Economikos, Hui Zang, Ruilong Xie, Hong Yu | 2019-12-31 |
| 10475890 | Scaled memory structures or other logic devices with middle of the line cuts | Wei Zhao, Hui Zang, Hong Yu, Zhenyu Hu, Scott Beasor +3 more | 2019-11-12 |
| 10468481 | Self-aligned single diffusion break isolation with reduction of strain loss | Hui Zang, Chun Yu Wong, Kwan-Yong Lim | 2019-11-05 |
| 10431499 | Insulating gate separation structure | Guowei Xu, Hui Zang, Yue Zhong | 2019-10-01 |
| 10403742 | Field-effect transistors with fins formed by a damascene-like process | Wei Zhao, David Paul Brunco, Jiehui Shu, Shesh Mani Pandey, Jinping Liu +1 more | 2019-09-03 |
| 10396206 | Gate cut method | Ashish Jha, Wei Hong, Wei Zhao, Tae Jeong LEE, Zhenyu Hu | 2019-08-27 |
| 10388652 | Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same | Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Lars Liebmann +4 more | 2019-08-20 |
| 10373875 | Contacts formed with self-aligned cuts | Ruilong Xie, Daniel Jaeger, Chanro Park, Laertis Economikos, Hui Zang | 2019-08-06 |
| 10373877 | Methods of forming source/drain contact structures on integrated circuit products | Hong Yu, Hui Zang, Wei Zhao, Yue Zhong, Guowei Xu +3 more | 2019-08-06 |
| 10361289 | Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same | Wei Zhao, Shahab Siddiqui, Ting-Hsiang Hung, Yiheng Xu, Beth Baumert +4 more | 2019-07-23 |
| 10325811 | Field-effect transistors with fins having independently-dimensioned sections | David Paul Brunco, Wei Zhao | 2019-06-18 |