Issued Patents All Time
Showing 26–50 of 131 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11678024 | Subtitle information display method and apparatus, and electronic device, and computer readable medium | Yingzhao SUN, Xingdong Li | 2023-06-13 |
| 11652142 | Lateral bipolar junction transistors having an emitter extension and a halo region | Mankyu Yang, Richard F. Taylor, III, Alexander M. Derrickson, Alexander L. Martin, Jagar Singh +1 more | 2023-05-16 |
| 11646361 | Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin | Arkadiusz Malinowski, Alexander M. Derrickson | 2023-05-09 |
| 11563085 | Transistors with separately-formed source and drain | Jiehui Shu, Baofu Zhu, Sipeng Gu | 2023-01-24 |
| 11545574 | Single diffusion breaks including stacked dielectric layers | Rinus Tek Po Lee, Sipeng Gu, Yue Hu | 2023-01-03 |
| 11502200 | Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material | Sipeng Gu, Judson R. Holt, Yanping Shen | 2022-11-15 |
| 11456382 | Transistor comprising an air gap positioned adjacent a gate electrode | Laertis Economikos, Shesh Mani Pandey, Hui Zang, Jinping Liu | 2022-09-27 |
| 11437490 | Methods of forming a replacement gate structure for a transistor device | Sipeng Gu | 2022-09-06 |
| 11437568 | Memory device and methods of making such a memory device | Yanping Shen, Sipeng Gu | 2022-09-06 |
| 11349030 | Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices | Jiehui Shu, Hong Yu | 2022-05-31 |
| 11342453 | Field effect transistor with asymmetric gate structure and method | Yanping Shen, Zhiqing Li | 2022-05-24 |
| 11264504 | Active and dummy fin structures | Yanping Shen, Hong Yu | 2022-03-01 |
| 11264470 | Lateral bipolar junction transistor device and method of making such a device | Tamilmani Ethirajan, Zhenyu Hu, Tung-Hsing Lee | 2022-03-01 |
| 11222844 | Via structures for use in semiconductor devices | Jun Lian, Sipeng Gu, Yanping Shen | 2022-01-11 |
| 11195761 | IC structure with short channel gate structure having shorter gate height than long channel gate structure | Hong Yu, Steven Bentley | 2021-12-07 |
| 11177385 | Transistors with a hybrid source or drain | Sipeng Gu, Jiehui Shu, Baofu Zhu | 2021-11-16 |
| 11164795 | Transistors with source/drain regions having sections of epitaxial semiconductor material | Sipeng Gu, Judson R. Holt, Bangun Indajang | 2021-11-02 |
| 11158633 | Multi-level isolation structure | Sipeng Gu, Shesh Mani Pandey, Lixia Lei, Gregory Costrini | 2021-10-26 |
| 11127842 | Single fin structures | Hong Yu, Zhenyu Hu | 2021-09-21 |
| 11114466 | IC products formed on a substrate having localized regions of high resistivity and methods of making such IC products | Sipeng Gu, Jiehui Shu | 2021-09-07 |
| 11094794 | Air spacer structures | Julien Frougier, Ali Razavieh | 2021-08-17 |
| 11075268 | Transistors with separately-formed source and drain | Jiehui Shu, Baofu Zhu, Sipeng Gu | 2021-07-27 |
| 11043566 | Semiconductor structures in a wide gate pitch region of semiconductor devices | Jiehui Shu, Judson R. Holt, Sipeng Gu | 2021-06-22 |
| 11037821 | Multiple patterning with self-alignment provided by spacers | Xiaoming Yang, Hong Yu, Jeffrey Chee, Guoliang Zhu | 2021-06-15 |
| 11037600 | Video processing method and apparatus, terminal and medium | Xu Han, Pingfei FU | 2021-06-15 |