Issued Patents All Time
Showing 26–50 of 106 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11355630 | Trench bottom shielding methods and approaches for trenched semiconductor device structures | Woongsun Kim, Daniel Jenner Lichtenwalner, Naeem Islam | 2022-06-07 |
| 11309413 | Semiconductor device with improved short circuit withstand time and methods for manufacturing the same | — | 2022-04-19 |
| 11184001 | Power switching devices with high dV/dt capability and methods of making such devices | Qingchun Zhang, Adam Barkley, Brett Hull | 2021-11-23 |
| 11075295 | Wide bandgap semiconductor device | — | 2021-07-27 |
| 11057033 | Hybrid power module | Edward Robert Van Brunt, Adam Barkley, Zachary Cole, Kraig J. Olejniczak | 2021-07-06 |
| 11024731 | Power module for supporting high current densities | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2021-06-01 |
| 10601413 | Power switching devices with DV/DT capability and methods of making such devices | Qingchun Zhang, Adam Barkley, Brett Hull | 2020-03-24 |
| 10269955 | Vertical FET structure | Marcelo Schupbach, Adam Barkley, Scott Allen | 2019-04-23 |
| 10153364 | Power module having a switch module for supporting high current densities | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2018-12-11 |
| 9984894 | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions | Sarit Dhar, Anant Agarwal, John R. Williams | 2018-05-29 |
| 9865750 | Schottky diode | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2018-01-09 |
| 9761439 | PECVD protective layers for semiconductor devices | Zoltan Ring, Daniel Namishia | 2017-09-12 |
| 9755018 | Bipolar junction transistor structure for reduced current crowding | Lin Cheng, Anant Agarwal | 2017-09-05 |
| 9673283 | Power module for supporting high current densities | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2017-06-06 |
| 9552997 | Silicon carbide switching devices including P-type channels | Mrinal K. Das, Qingchun Zhang | 2017-01-24 |
| 9548374 | High power insulated gate bipolar transistors | Qingchun Zhang, Charlotte Jonas, Anant Agarwal | 2017-01-17 |
| 9515135 | Edge termination structures for silicon carbide devices | Anant Agarwal, Allan Ward | 2016-12-06 |
| 9478616 | Semiconductor device having high performance channel | Sarit Dhar, Lin Cheng, Anant Agarwal | 2016-10-25 |
| 9431525 | IGBT with bidirectional conduction | Qingchun Zhang | 2016-08-30 |
| 9396946 | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility | Sarit Dhar, Lin Cheng, Anant Agarwal, John Williams Palmour, Erik Maki +2 more | 2016-07-19 |
| 9385182 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Jason Henning, Qingchun Zhang | 2016-07-05 |
| 9349596 | Methods of processing semiconductor wafers having silicon carbide power devices thereon | Anant Agarwal, Matthew Donofrio | 2016-05-24 |
| 9343540 | Transistors with a gate insulation layer having a channel depleting interfacial charge | Sarit Dhar | 2016-05-17 |
| 9337268 | SiC devices with high blocking voltage terminated by a negative bevel | Qingchun Zhang, Craig Capell, Anant Agarwal | 2016-05-10 |
| 9312343 | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials | Qingchun Zhang, Anant Agarwal, Sarit Dhar | 2016-04-12 |