Issued Patents All Time
Showing 76–100 of 106 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8232558 | Junction barrier Schottky diodes with current surge capability | Qingchun Zhang | 2012-07-31 |
| 8193848 | Power switching devices having controllable surge current capabilities | Qingchun Zhang, James Richmond, Anant Agarwal | 2012-06-05 |
| 8124480 | Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations | Anant Agarwal | 2012-02-28 |
| 8034688 | Methods of forming power switching semiconductor devices including rectifying junction-shunts | Allen Hefner, Anant Agarwal | 2011-10-11 |
| 7923320 | Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors | — | 2011-04-12 |
| 7883949 | Methods of forming silicon carbide switching devices including P-type channels | Mrinal K. Das, Qingchun Zhang | 2011-02-08 |
| 7842549 | Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations | Anant Agarwal | 2010-11-30 |
| 7728402 | Semiconductor devices including schottky diodes with controlled breakdown | Qingchun Zhang, Anant Agarwal | 2010-06-01 |
| 7705362 | Silicon carbide devices with hybrid well regions | Mrinal K. Das | 2010-04-27 |
| 7615801 | High voltage silicon carbide devices having bi-directional blocking capabilities | Jason Jenny, Mrinal K. Das, Anant Agarwal, John Williams Palmour, Hudson M. Hobgood | 2009-11-10 |
| 7598567 | Power switching semiconductor devices including rectifying junction-shunts | Allen Hefner, Anant Agarwal | 2009-10-06 |
| 7547578 | Methods of processing semiconductor wafers having silicon carbide power devices thereon | Anant Agarwal, Matthew Donofrio | 2009-06-16 |
| 7419877 | Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination | Anant Agarwal | 2008-09-02 |
| 7414268 | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities | Jason Jenny, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour | 2008-08-19 |
| 7391057 | High voltage silicon carbide devices having bi-directional blocking capabilities | Jason Jenny, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour | 2008-06-24 |
| 7381992 | Silicon carbide power devices with self-aligned source and well regions | — | 2008-06-03 |
| 7345310 | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof | Anant Agarwal, Sumithra Krishnaswami, D. Craig Capell | 2008-03-18 |
| 7304334 | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same | Anant Agarwal, Sumithra Krishnaswami, Edward Harold Hurt | 2007-12-04 |
| 7221010 | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors | — | 2007-05-22 |
| 7135359 | Manufacturing methods for large area silicon carbide devices | Anant Agarwal, John Williams Palmour | 2006-11-14 |
| 7118970 | Methods of fabricating silicon carbide devices with hybrid well regions | Mrinal K. Das | 2006-10-10 |
| 7074643 | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same | — | 2006-07-11 |
| 7026650 | Multiple floating guard ring edge termination for silicon carbide devices | Anant Agarwal | 2006-04-11 |
| 6979863 | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same | — | 2005-12-27 |
| 6956238 | SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL | Anant Agarwal, Mrinal K. Das, Lori A. Lipkin, John Williams Palmour, Ranbir Singh | 2005-10-18 |