Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7067176 | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment | Mrinal K. Das | 2006-06-27 |
| 6998322 | Methods of fabricating high voltage, high temperature capacitor and interconnection structures | Mrinal K. Das, John Williams Palmour, Scott Sheppard, Helmut Hagleitner | 2006-02-14 |
| 6972436 | High voltage, high temperature capacitor and interconnection structures | Mrinal K. Das, John Williams Palmour, Scott Sheppard, Helmut Hagleitner | 2005-12-06 |
| 6956238 | SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL | Sei-Hyung Ryu, Anant Agarwal, Mrinal K. Das, John Williams Palmour, Ranbir Singh | 2005-10-18 |
| 6767843 | Method of N2O growth of an oxide layer on a silicon carbide layer | Mrinal K. Das, John Williams Palmour | 2004-07-27 |
| 6610366 | Method of N2O annealing an oxide layer on a silicon carbide layer | — | 2003-08-26 |
| 6528373 | Layered dielectric on silicon carbide semiconductor structures | John Williams Paimour | 2003-03-04 |
| 6437371 | Layered dielectric on silicon carbide semiconductor structures | John Williams Paimour | 2002-08-20 |
| 6344663 | Silicon carbide CMOS devices | David B. Slater, Jr., Alexander Suvorov, John Williams Palmour | 2002-02-05 |
| 6246076 | Layered dielectric on silicon carbide semiconductor structures | John Williams Palmour | 2001-06-12 |
| 5972801 | Process for reducing defects in oxide layers on silicon carbide | David B. Slater, Jr., John Williams Palmour | 1999-10-26 |