Issued Patents All Time
Showing 25 most recent of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9608166 | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed | John Edmond, Matthew Donofrio | 2017-03-28 |
| 9484499 | Transparent ohmic contacts on light emitting diodes with carrier substrates | John Edmond, Michael John Bergmann | 2016-11-01 |
| 9437783 | Light emitting diode (LED) contact structures and process for fabricating the same | Pritish Kar, Matthew Donofrio, Brad Williams | 2016-09-06 |
| RE45517 | Vertical geometry InGaN LED | Kathleen Marie Doverspike, John Edmond, Hua-Shuang Kong, Heidi Marie Dieringer | 2015-05-19 |
| 8907366 | Light emitting diodes including current spreading layer and barrier sublayers | Bradley E. Williams, Peter Scott Andrews, John Edmond, Scott Allen | 2014-12-09 |
| 8878209 | High efficiency group III nitride LED with lenticular surface | John Edmond, Jayesh Bharathan, Matthew Donofrio | 2014-11-04 |
| 8822315 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, Alexander Suvorov, John Edmond | 2014-09-02 |
| 8704240 | Light emitting devices having current reducing structures | David T. Emerson, Kevin Haberern, Michael John Bergmann, Matthew Donofrio, John Edmond | 2014-04-22 |
| 8692277 | Light emitting diodes including optically matched substrates | Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault +1 more | 2014-04-08 |
| 8692267 | High efficiency Group III nitride LED with lenticular surface | John Edmond, Jayesh Bharathan, Matthew Donofrio | 2014-04-08 |
| 8643195 | Nickel tin bonding system for semiconductor wafers and devices | John Edmond, Hua-Shuang Kong | 2014-02-04 |
| 8604502 | Light emitting diodes including barrier sublayers | Bradley E. Williams, Peter Scott Andrews, John Edmond, Scott Allen | 2013-12-10 |
| 8575633 | Light emitting diode with improved light extraction | Matthew Donofrio, Hua-Shuang Kong, John Edmond | 2013-11-05 |
| 8436368 | Methods of forming light emitting devices having current reducing structures | David T. Emerson, Kevin Haberern, Michael John Bergmann, Matthew Donofrio, John Edmond | 2013-05-07 |
| 8426881 | Light emitting diodes including two reflector layers | Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault +1 more | 2013-04-23 |
| 8357923 | External extraction light emitting diode based upon crystallographic faceted surfaces | John Edmond, Hua-Shuang Kong, Matthew Donofrio | 2013-01-22 |
| 8269241 | Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor | Bradley E. Williams, Peter Scott Andrews, John Edmond, Scott Allen | 2012-09-18 |
| 8247836 | Nickel tin bonding system with barrier layer for semiconductor wafers and devices | Matthew Donofrio, John Edmond, Hua-Shuang Kong | 2012-08-21 |
| RE43412 | LED with self aligned bond pad | — | 2012-05-29 |
| 8183588 | High efficiency group III nitride LED with lenticular surface | John Edmond, Jayesh Bharathan, Matthew Donofrio | 2012-05-22 |
| 8174037 | High efficiency group III nitride LED with lenticular surface | John Edmond, Jayesh Bharathan, Matthew Donofrio | 2012-05-08 |
| 8163577 | Methods of forming light emitting devices having current reducing structures | David T. Emerson, Kevin Haberern, Michael John Bergmann, Matthew Donofrio, John Edmond | 2012-04-24 |
| 8154039 | High efficiency group III nitride LED with lenticular surface | John Edmond, Jayesh Bharathan, Matthew Donofrio | 2012-04-10 |
| 8101961 | Transparent ohmic contacts on light emitting diodes with growth substrates | John Edmond, Michael John Bergmann | 2012-01-24 |
| 8076670 | LED with conductively joined bonding structure | John Edmond | 2011-12-13 |