Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE46588 | Group III nitride LED with undoped cladding layer | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2017-10-24 |
| RE46589 | Group III nitride LED with undoped cladding layer and multiple quantum well | John Edmond, Hua-Shuang Kong, Michael John Bergmann, David T. Emerson | 2017-10-24 |
| 9112083 | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures | David T. Emerson, James Ibbetson, Michael John Bergmann, Michael O'Loughlin, Howard Nordby +1 more | 2015-08-18 |
| RE45517 | Vertical geometry InGaN LED | John Edmond, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2015-05-19 |
| RE45059 | Group III nitride LED with undoped cladding layer | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2014-08-05 |
| 8227268 | Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures | David T. Emerson, James Ibbetson, Michael John Bergmann, Michael O'Loughlin, Howard Nordby +1 more | 2012-07-24 |
| RE42007 | Vertical geometry InGaN LED | John Edmond, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2010-12-28 |
| 7692209 | Group III nitride LED with undoped cladding layer | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2010-04-06 |
| 7531840 | Light emitting diode with metal coupling structure | John Edmond, Michael John Bergmann, Hua-Shuang Kong | 2009-05-12 |
| 7482183 | Light emitting diode with degenerate coupling structure | John Edmond, Michael John Bergmann, Hua-Shuang Kong | 2009-01-27 |
| 7312474 | Group III nitride based superlattice structures | David T. Emerson, James Ibbetson, Michael John Bergmann, Michael O'Loughlin, Howard Nordby +1 more | 2007-12-25 |
| 7170097 | Inverted light emitting diode on conductive substrate | John Edmond, Michael John Bergmann, Hua-Shuang Kong | 2007-01-30 |
| 7071490 | Group III nitride LED with silicon carbide substrate | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2006-07-04 |
| 7034328 | Vertical geometry InGaN LED | John Edmond, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2006-04-25 |
| 6987281 | Group III nitride contact structures for light emitting devices | John Edmond, Michael John Bergmann, Hua-Shuang Kong | 2006-01-17 |
| 6958497 | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures | David T. Emerson, James Ibbetson, Michael John Bergmann, Michael O'Loughlin, Howard Nordby +1 more | 2005-10-25 |
| 6952024 | Group III nitride LED with silicon carbide cladding layer | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2005-10-04 |
| 6906352 | Group III nitride LED with undoped cladding layer and multiple quantum well | John Edmond, Hua-Shuang Kong, Michael John Bergmann, David T. Emerson | 2005-06-14 |
| 6800876 | Group III nitride LED with undoped cladding layer (5000.137) | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2004-10-05 |
| 6784461 | Group III nitride light emitting devices with progressively graded layers | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2004-08-31 |
| 6717185 | Light emitting devices with Group III nitride contact layer and superlattice | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2004-04-06 |
| 6630690 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | John Edmond, Hua-Shuang Kong, Michelle Turner Leonard | 2003-10-07 |
| 6610551 | Vertical geometry InGaN LED | John Edmond, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2003-08-26 |
| 6534797 | Group III nitride light emitting devices with gallium-free layers | John Edmond, Hua-Shuang Kong, Michael John Bergmann | 2003-03-18 |
| 6492193 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | John Edmond, Hua-Shuang Kong, Michelle Turner Leonard | 2002-12-10 |