Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8822315 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, John Edmond, David B. Slater, Jr. | 2014-09-02 |
| 7943406 | LED fabrication via ion implant isolation | David B. Slater, Jr., John Edmond, Iain Hamilton | 2011-05-17 |
| 7943954 | LED fabrication via ion implant isolation | Yifeng Wu, Gerald H. Negley, David B. Slater, Jr., Valeri F. Tsvetkov | 2011-05-17 |
| 7675068 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, John Edmond, David B. Slater, Jr. | 2010-03-09 |
| 7592634 | LED fabrication via ion implant isolation | Yifeng Wu, Gerald H. Negley, David B. Slater, Jr., Valeri F. Tsvetkov | 2009-09-22 |
| 7338822 | LED fabrication via ion implant isolation | Yifeng Wu, Gerald H. Negley, David B. Slater, Jr., Valeri F. Tsvetkov | 2008-03-04 |
| 7294859 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, John Edmond, David B. Slater, Jr. | 2007-11-13 |
| 7138291 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, John Edmond, David B. Slater, Jr. | 2006-11-21 |
| 6995398 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, John Edmond, David B. Slater, Jr. | 2006-02-07 |
| 6909119 | Low temperature formation of backside ohmic contacts for vertical devices | David B. Slater, Jr. | 2005-06-21 |
| 6884644 | Low temperature formation of backside ohmic contacts for vertical devices | David B. Slater, Jr. | 2005-04-26 |
| 6803243 | Low temperature formation of backside ohmic contacts for vertical devices | David B. Slater, Jr. | 2004-10-12 |
| 6344663 | Silicon carbide CMOS devices | David B. Slater, Jr., Lori A. Lipkin, John Williams Palmour | 2002-02-05 |
| 6303475 | Methods of fabricating silicon carbide power devices by controlled annealing | John Williams Palmour, Ranbir Singh | 2001-10-16 |
| 6100169 | Methods of fabricating silicon carbide power devices by controlled annealing | John Williams Palmour, Ranbir Singh | 2000-08-08 |