Issued Patents All Time
Showing 25 most recent of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11024731 | Power module for supporting high current densities | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2021-06-01 |
| 10847647 | Power semiconductor devices having top-side metallization structures that include buried grain stop layers | Shadi Sabri, Daniel Jenner Lichtenwalner, Edward Robert Van Brunt, Brett Hull | 2020-11-24 |
| 10707858 | Power module with improved reliability | Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan D. Young, Van Mieczkowski | 2020-07-07 |
| 10510905 | Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region | Qingchun Zhang, Edward Robert Van Brunt, Brett Hull | 2019-12-17 |
| 10269955 | Vertical FET structure | Sei-Hyung Ryu, Marcelo Schupbach, Adam Barkley | 2019-04-23 |
| 10153364 | Power module having a switch module for supporting high current densities | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2018-12-11 |
| 9998109 | Power module with improved reliability | Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan D. Young, Van Mieczkowski | 2018-06-12 |
| 9865750 | Schottky diode | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2018-01-09 |
| 9673283 | Power module for supporting high current densities | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2017-06-06 |
| 9466674 | Semiconductor devices with non-implanted barrier regions and methods of fabricating same | Qingchun Zhang | 2016-10-11 |
| 9231122 | Schottky diode | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2016-01-05 |
| 9142636 | Methods of fabricating nitride-based transistors with an ETCH stop layer | Scott Sheppard, Andrew Mackenzie, Richard Peter Smith | 2015-09-22 |
| 8907366 | Light emitting diodes including current spreading layer and barrier sublayers | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond | 2014-12-09 |
| 8680587 | Schottky diode | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2014-03-25 |
| 8664665 | Schottky diode employing recesses for elements of junction barrier array | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2014-03-04 |
| 8618582 | Edge termination structure employing recesses for edge termination elements | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour | 2013-12-31 |
| 8604502 | Light emitting diodes including barrier sublayers | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond | 2013-12-10 |
| 8269241 | Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond | 2012-09-18 |
| 7960756 | Transistors including supported gate electrodes | Scott Sheppard | 2011-06-14 |
| 7858460 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Sheppard +3 more | 2010-12-28 |
| 7611915 | Methods of manufacturing light emitting diodes including barrier layers/sublayers | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond | 2009-11-03 |
| 7592211 | Methods of fabricating transistors including supported gate electrodes | Scott Sheppard | 2009-09-22 |
| 7525122 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Sheppard +3 more | 2009-04-28 |
| 7348612 | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same | Saptharishi Sriram | 2008-03-25 |
| 7211833 | Light emitting diodes including barrier layers/sublayers | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond | 2007-05-01 |