| 11024731 |
Power module for supporting high current densities |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2021-06-01 |
$66,892,000 |
| 10847647 |
Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
Shadi Sabri, Daniel Jenner Lichtenwalner, Edward Robert Van Brunt, Brett Hull |
2020-11-24 |
$38,827,000 |
| 10707858 |
Power module with improved reliability |
Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan D. Young, Van Mieczkowski |
2020-07-07 |
$84,287,000 |
| 10510905 |
Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region |
Qingchun Zhang, Edward Robert Van Brunt, Brett Hull |
2019-12-17 |
$48,468,000 |
| 10269955 |
Vertical FET structure |
Sei-Hyung Ryu, Marcelo Schupbach, Adam Barkley |
2019-04-23 |
$9,011,000 |
| 10153364 |
Power module having a switch module for supporting high current densities |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2018-12-11 |
$19,090,000 |
| 9998109 |
Power module with improved reliability |
Mrinal K. Das, Adam Barkley, Brian Fetzer, Jonathan D. Young, Van Mieczkowski |
2018-06-12 |
$13,660,000 |
| 9865750 |
Schottky diode |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2018-01-09 |
$9,658,000 |
| 9673283 |
Power module for supporting high current densities |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2017-06-06 |
$9,572,000 |
| 9466674 |
Semiconductor devices with non-implanted barrier regions and methods of fabricating same |
Qingchun Zhang |
2016-10-11 |
$3,821,000 |
| 9231122 |
Schottky diode |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2016-01-05 |
$21,655,000 |
| 9142636 |
Methods of fabricating nitride-based transistors with an ETCH stop layer |
Scott Sheppard, Andrew Mackenzie, Richard Peter Smith |
2015-09-22 |
$2,694,000 |
| 8907366 |
Light emitting diodes including current spreading layer and barrier sublayers |
David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond |
2014-12-09 |
$8,413,000 |
| 8680587 |
Schottky diode |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2014-03-25 |
$9,768,000 |
| 8664665 |
Schottky diode employing recesses for elements of junction barrier array |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2014-03-04 |
$19,348,000 |
| 8618582 |
Edge termination structure employing recesses for edge termination elements |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour |
2013-12-31 |
$12,577,000 |
| 8604502 |
Light emitting diodes including barrier sublayers |
David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond |
2013-12-10 |
$11,467,000 |
| 8269241 |
Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor |
David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond |
2012-09-18 |
$8,195,000 |
| 7960756 |
Transistors including supported gate electrodes |
Scott Sheppard |
2011-06-14 |
$9,114,000 |
| 7858460 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Sheppard +3 more |
2010-12-28 |
$17,928,000 |
| 7611915 |
Methods of manufacturing light emitting diodes including barrier layers/sublayers |
David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond |
2009-11-03 |
$9,514,000 |
| 7592211 |
Methods of fabricating transistors including supported gate electrodes |
Scott Sheppard |
2009-09-22 |
$11,516,000 |
| 7525122 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Sheppard +3 more |
2009-04-28 |
$29,279,000 |
| 7348612 |
Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
Saptharishi Sriram |
2008-03-25 |
$32,752,000 |
| 7211833 |
Light emitting diodes including barrier layers/sublayers |
David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, John Edmond |
2007-05-01 |
$15,335,000 |