| 11024731 |
Power module for supporting high current densities |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2021-06-01 |
$66,892,000 |
| 10153364 |
Power module having a switch module for supporting high current densities |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2018-12-11 |
$19,090,000 |
| 9865750 |
Schottky diode |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2018-01-09 |
$9,658,000 |
| 9673283 |
Power module for supporting high current densities |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2017-06-06 |
$9,572,000 |
| 9385182 |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
Qingchun Zhang, Sei-Hyung Ryu |
2016-07-05 |
$10,950,000 |
| 9318623 |
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
Qingchun Zhang |
2016-04-19 |
$2,305,000 |
| 9240476 |
Field effect transistor devices with buried well regions and epitaxial layers |
Vipindis Pala, Lin Cheng, Anant Agarwal, John Williams Palmour |
2016-01-19 |
$3,655,000 |
| 9231122 |
Schottky diode |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2016-01-05 |
$21,655,000 |
| 9024327 |
Metallization structure for high power microelectronic devices |
Allan Ward |
2015-05-05 |
$4,876,000 |
| 8803277 |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
Qingchun Zhang, Sei-Hyung Ryu |
2014-08-12 |
$9,034,000 |
| 8680587 |
Schottky diode |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2014-03-25 |
$9,768,000 |
| 8664665 |
Schottky diode employing recesses for elements of junction barrier array |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2014-03-04 |
$19,348,000 |
| 8618582 |
Edge termination structure employing recesses for edge termination elements |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2013-12-31 |
$12,577,000 |
| 8563372 |
Methods of forming contact structures including alternating metal and silicon layers and related devices |
Helmut Hagleitner, Zoltan Ring, Scott Sheppard, Jason Gurganus, Dan Namishia |
2013-10-22 |
$9,185,000 |
| 8432012 |
Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
Qingchun Zhang |
2013-04-30 |
$31,345,000 |
| 8049272 |
Transistors having implanted channel layers and methods of fabricating the same |
Allan Ward, Alexander V. Suvorov |
2011-11-01 |
$9,288,000 |
| 7915703 |
Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same |
Allan Ward |
2011-03-29 |
$9,949,000 |
| 7880172 |
Transistors having implanted channels and implanted P-type regions beneath the source region |
Allan Ward, Alexander V. Suvorov |
2011-02-01 |
$17,861,000 |
| 7875545 |
Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices |
Allan Ward, Helmut Hagleitner, Keith Wieber |
2011-01-25 |
$13,233,000 |
| 7858460 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Zoltan Ring, Helmut Hagleitner, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more |
2010-12-28 |
$17,928,000 |
| 7737476 |
Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures |
Saptharishi Sriram, Keith Wieber |
2010-06-15 |
$22,716,000 |
| 7696584 |
Reduced leakage power devices by inversion layer surface passivation |
Allan Ward |
2010-04-13 |
$40,910,000 |
| 7598576 |
Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
Allan Ward |
2009-10-06 |
$19,906,000 |
| 7525122 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Zoltan Ring, Helmut Hagleitner, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more |
2009-04-28 |
$29,279,000 |
| 7265399 |
Asymetric layout structures for transistors and methods of fabricating the same |
Saptharishi Sriram |
2007-09-04 |
$10,954,000 |