Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12417966 | IPD components having SiC substrates and devices and processes implementing the same | Donald Farrell, Marvin Marbell, Jeremy Fisher, Scott Sheppard, Dan Etter | 2025-09-16 |
| 12315836 | Limiting failures caused by dendrite growth on semiconductor chips | Mitch Flowers, Eng Wah Woo, Erwin B. Cohen | 2025-05-27 |
| 12191821 | Group III nitride-based monolithic microwave integrated circuits having multi-layer metal-insulator-metal capacitors | Jeremy Fisher, Scott Sheppard | 2025-01-07 |
| 11682634 | Packaged electronic circuits having moisture protection encapsulation and methods of forming same | Kyle Bothe, Fabian Radulescu, Scott Sheppard | 2023-06-20 |
| 11658234 | Field effect transistor with enhanced reliability | Kyle Bothe, Terry Alcorn, Jia Guo, Matt King, Saptharishi Sriram +4 more | 2023-05-23 |
| 11616136 | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability | Kyle Bothe, Evan Jones, Chris Hardiman, Fabian Radulescu, Terry Alcorn +2 more | 2023-03-28 |
| 10971612 | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability | Kyle Bothe, Evan Jones, Chris Hardiman, Fabian Radulescu, Terry Alcorn +2 more | 2021-04-06 |
| 10923585 | High electron mobility transistors having improved contact spacing and/or improved contact vias | Kyle Bothe, Evan Jones, Chris Hardiman, Fabian Radulescu, Jeremy Fisher +1 more | 2021-02-16 |
| 10811370 | Packaged electronic circuits having moisture protection encapsulation and methods of forming same | Kyle Bothe, Fabian Radulescu, Scott Sheppard | 2020-10-20 |
| 9786660 | Transistor with bypassed gate structure field | Donald Farrell, Simon Wood, Scott Sheppard | 2017-10-10 |
| 9530647 | Devices including ultra-short gates and methods of forming same | Zoltan Ring | 2016-12-27 |
| 8563372 | Methods of forming contact structures including alternating metal and silicon layers and related devices | Helmut Hagleitner, Zoltan Ring, Scott Sheppard, Jason Henning, Jason Gurganus | 2013-10-22 |