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Methods for pillar connection on frontside and passive device integration on backside of die |
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Methods for pillar connection on frontside and passive device integration on backside of die |
Daniel Namishia, Fabian Radulescu |
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Field effect transistor with enhanced reliability |
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High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
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Field effect transistor with at least partially recessed field plate |
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Stepped field plates with proximity to conduction channel and related fabrication methods |
Evan Jones, Jia Guo, Fabian Radulescu, Scott Sheppard |
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High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
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Recessed field plate transistor structures |
Saptharishi Sriram, Fabian Radulescu, Scott Sheppard |
2017-12-19 |
| 9679981 |
Cascode structures for GaN HEMTs |
Saptharishi Sriram, Fabian Radulescu, Scott Sheppard |
2017-06-13 |
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Wafer-level die attach metallization |
Fabian Radulescu, Helmut Hagleitner, William T. Pulz, Van Mieczkowski |
2017-01-03 |
| 8970010 |
Wafer-level die attach metallization |
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2015-03-03 |