Issued Patents All Time
Showing 1–25 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12402346 | Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof | Thomas J. Smith | 2025-08-26 |
| 12402348 | Field effect transistor with selective channel layer doping | Jia Guo, Scott Sheppard | 2025-08-26 |
| 12324179 | Group III-nitride high-electron mobility transistors with a buried metallic conductive material layer and process for making the same | — | 2025-06-03 |
| 12142674 | Gallium Nitride high-electron mobility transistors with p-type layers and process for making the same | — | 2024-11-12 |
| 12034072 | Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity | Yueying Liu, Scott Sheppard, Jennifer Gao | 2024-07-09 |
| 11929428 | Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same | Thomas J. Smith, Charles W. Richards | 2024-03-12 |
| 11862719 | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same | Thomas J. Smith, Alexander V. Suvorov, Christer Hallin | 2024-01-02 |
| 11658234 | Field effect transistor with enhanced reliability | Kyle Bothe, Terry Alcorn, Dan Namishia, Jia Guo, Matt King +4 more | 2023-05-23 |
| 11594628 | Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors | Jennifer Gao, Jeremy Fisher, Scott Sheppard | 2023-02-28 |
| 11476359 | Structures for reducing electron concentration and process for reducing electron concentration | Jia Guo, Scott Sheppard | 2022-10-18 |
| 11430882 | Gallium nitride high-electron mobility transistors with p-type layers and process for making the same | — | 2022-08-30 |
| 11244831 | Depletion mode semiconductor devices including current dependent resistance | Yueying Liu | 2022-02-08 |
| 10978583 | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity | Yueying Liu, Scott Sheppard, Jennifer Gao | 2021-04-13 |
| 10892356 | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same | Thomas J. Smith, Alexander V. Suvorov, Christer Hallin | 2021-01-12 |
| 10861963 | Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors | Jennifer Gao, Jeremy Fisher, Scott Sheppard | 2020-12-08 |
| 10840334 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same | Thomas J. Smith, Alexander V. Suvorov, Christer Hallin | 2020-11-17 |
| 10615273 | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity | Yueying Liu, Scott Sheppard | 2020-04-07 |
| 10516043 | Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors | Jennifer Gao, Jeremy Fisher, Scott Sheppard | 2019-12-24 |
| 10354879 | Depletion mode semiconductor devices including current dependent resistance | Yueying Liu | 2019-07-16 |
| 10192980 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same | Alexander V. Suvorov, Christer Hallin | 2019-01-29 |
| 9847411 | Recessed field plate transistor structures | Terry Alcorn, Fabian Radulescu, Scott Sheppard | 2017-12-19 |
| 9755059 | Cascode structures with GaN cap layers | — | 2017-09-05 |
| 9679981 | Cascode structures for GaN HEMTs | Terry Alcorn, Fabian Radulescu, Scott Sheppard | 2017-06-13 |
| 9640627 | Schottky contact | Helmut Hagleitner | 2017-05-02 |
| 9608078 | Semiconductor device with improved field plate | Helmut Hagleitner, Fabian Radulescu, Daniel Etter | 2017-03-28 |