Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9356129 | Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same | Fabian Radulescu | 2016-05-31 |
| 9306009 | Mix doping of a semi-insulating Group III nitride | Christer Hallin | 2016-04-05 |
| 9202903 | Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same | Fabian Radulescu | 2015-12-01 |
| 8421122 | High power gallium nitride field effect transistor switches | Thomas J. Smith, Matthew Wills | 2013-04-16 |
| 8304783 | Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same | Qingchun Zhang | 2012-11-06 |
| 8203185 | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods | — | 2012-06-19 |
| 8138583 | Diode having reduced on-resistance and associated method of manufacture | Thomas J. Smith, Helmut Hagleitner | 2012-03-20 |
| 7943972 | Methods of fabricating transistors having buried P-type layers coupled to the gate | Matt Willis | 2011-05-17 |
| 7858460 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more | 2010-12-28 |
| 7737476 | Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures | Jason Henning, Keith Wieber | 2010-06-15 |
| 7646043 | Transistors having buried p-type layers coupled to the gate | Matt Willis | 2010-01-12 |
| 7525122 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more | 2009-04-28 |
| 7402844 | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods | — | 2008-07-22 |
| 7348612 | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same | Scott Allen | 2008-03-25 |
| 7326962 | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same | — | 2008-02-05 |
| 7297580 | Methods of fabricating transistors having buried p-type layers beneath the source region | — | 2007-11-20 |
| 7265399 | Asymetric layout structures for transistors and methods of fabricating the same | Jason Henning | 2007-09-04 |
| 6956239 | Transistors having buried p-type layers beneath the source region | — | 2005-10-18 |
| 6906350 | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure | — | 2005-06-14 |
| 6902964 | Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure | — | 2005-06-07 |
| 5925895 | Silicon carbide power MESFET with surface effect supressive layer | Rowland C. Clarke | 1999-07-20 |
| 5825076 | Integrated circuit non-etch technique for forming vias in a semiconductor wafer and a semiconductor wafer having vias formed therein using non-etch technique | Joseph C. Kotvas | 1998-10-20 |
| 5821576 | Silicon carbide power field effect transistor | — | 1998-10-13 |
| 5612547 | Silicon carbide static induction transistor | Rowland C. Clarke, Richard R. Siergiej | 1997-03-18 |
| 5386115 | Solid state micro-machined mass spectrograph universal gas detection sensor | Carl B. Freidhoff, Robert M. Young | 1995-01-31 |