| 11316028 |
Nitride-based transistors with a protective layer and a low-damage recess |
Scott Sheppard, Richard Peter Smith |
2022-04-26 |
$154,014,000 |
| 10367074 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Scott Sheppard, Helmut Hagleitner |
2019-07-30 |
$55,513,000 |
| 9934983 |
Stress mitigation for thin and thick films used in semiconductor circuitry |
Donald A. Gajewski, Scott Sheppard, Daniel Namishia |
2018-04-03 |
$11,690,000 |
| 9812338 |
Encapsulation of advanced devices using novel PECVD and ALD schemes |
Helmut Hagleitner, Daniel Namishia |
2017-11-07 |
$8,789,000 |
| 9761439 |
PECVD protective layers for semiconductor devices |
Sei-Hyung Ryu, Daniel Namishia |
2017-09-12 |
$3,227,000 |
| 9607955 |
Contact pad |
Van Mieczkowski, Jason Gurganus, Helmut Hagleitner |
2017-03-28 |
$1,748,000 |
| 9530647 |
Devices including ultra-short gates and methods of forming same |
Dan Namishia |
2016-12-27 |
$7,582,000 |
| 9490169 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Scott Sheppard, Helmut Hagleitner |
2016-11-08 |
$2,091,000 |
| 9269662 |
Using stress reduction barrier sub-layers in a semiconductor die |
Helmut Hagleitner, Daniel Namishia, Fabian Radulescu |
2016-02-23 |
$13,050,000 |
| 9142631 |
Multilayer diffusion barriers for wide bandgap Schottky barrier devices |
Van Mieczkowski, Helmut Hagleitner |
2015-09-22 |
$2,694,000 |
| 8994073 |
Hydrogen mitigation schemes in the passivation of advanced devices |
Helmut Hagleitner |
2015-03-31 |
$8,588,000 |
| 8563372 |
Methods of forming contact structures including alternating metal and silicon layers and related devices |
Helmut Hagleitner, Scott Sheppard, Jason Henning, Jason Gurganus, Dan Namishia |
2013-10-22 |
$9,185,000 |
| 8202796 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Scott Sheppard, Helmut Hagleitner |
2012-06-19 |
$8,258,000 |
| 7906799 |
Nitride-based transistors with a protective layer and a low-damage recess |
Scott Sheppard, Richard Peter Smith |
2011-03-15 |
$26,314,000 |
| 7892974 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Scott Sheppard, Helmut Hagleitner |
2011-02-22 |
$18,341,000 |
| 7858460 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more |
2010-12-28 |
$17,928,000 |
| 7855401 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Scott Sheppard, Richard Peter Smith |
2010-12-21 |
$36,454,000 |
| 7525122 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more |
2009-04-28 |
$29,279,000 |
| 7125786 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Scott Sheppard, Helmut Hagleitner |
2006-10-24 |
$4,795,000 |
| 7045404 |
Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
Scott Sheppard, Richard Peter Smith |
2006-05-16 |
$18,481,000 |
| 6946739 |
Layered semiconductor devices with conductive vias |
— |
2005-09-20 |
$7,378,000 |
| 6649497 |
Method of forming vias in silicon carbide and resulting devices and circuits |
— |
2003-11-18 |
$18,994,000 |
| 6515303 |
Method of forming vias in silicon carbide and resulting devices and circuits |
— |
2003-02-04 |
$11,090,000 |
| 6475889 |
Method of forming vias in silicon carbide and resulting devices and circuits |
— |
2002-11-05 |
$26,185,000 |