Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11316028 | Nitride-based transistors with a protective layer and a low-damage recess | Scott Sheppard, Richard Peter Smith | 2022-04-26 |
| 10367074 | Method of forming vias in silicon carbide and resulting devices and circuits | Scott Sheppard, Helmut Hagleitner | 2019-07-30 |
| 9934983 | Stress mitigation for thin and thick films used in semiconductor circuitry | Donald A. Gajewski, Scott Sheppard, Daniel Namishia | 2018-04-03 |
| 9812338 | Encapsulation of advanced devices using novel PECVD and ALD schemes | Helmut Hagleitner, Daniel Namishia | 2017-11-07 |
| 9761439 | PECVD protective layers for semiconductor devices | Sei-Hyung Ryu, Daniel Namishia | 2017-09-12 |
| 9607955 | Contact pad | Van Mieczkowski, Jason Gurganus, Helmut Hagleitner | 2017-03-28 |
| 9530647 | Devices including ultra-short gates and methods of forming same | Dan Namishia | 2016-12-27 |
| 9490169 | Method of forming vias in silicon carbide and resulting devices and circuits | Scott Sheppard, Helmut Hagleitner | 2016-11-08 |
| 9269662 | Using stress reduction barrier sub-layers in a semiconductor die | Helmut Hagleitner, Daniel Namishia, Fabian Radulescu | 2016-02-23 |
| 9142631 | Multilayer diffusion barriers for wide bandgap Schottky barrier devices | Van Mieczkowski, Helmut Hagleitner | 2015-09-22 |
| 8994073 | Hydrogen mitigation schemes in the passivation of advanced devices | Helmut Hagleitner | 2015-03-31 |
| 8563372 | Methods of forming contact structures including alternating metal and silicon layers and related devices | Helmut Hagleitner, Scott Sheppard, Jason Henning, Jason Gurganus, Dan Namishia | 2013-10-22 |
| 8202796 | Method of forming vias in silicon carbide and resulting devices and circuits | Scott Sheppard, Helmut Hagleitner | 2012-06-19 |
| 7906799 | Nitride-based transistors with a protective layer and a low-damage recess | Scott Sheppard, Richard Peter Smith | 2011-03-15 |
| 7892974 | Method of forming vias in silicon carbide and resulting devices and circuits | Scott Sheppard, Helmut Hagleitner | 2011-02-22 |
| 7858460 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more | 2010-12-28 |
| 7855401 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Scott Sheppard, Richard Peter Smith | 2010-12-21 |
| 7525122 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more | 2009-04-28 |
| 7125786 | Method of forming vias in silicon carbide and resulting devices and circuits | Scott Sheppard, Helmut Hagleitner | 2006-10-24 |
| 7045404 | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof | Scott Sheppard, Richard Peter Smith | 2006-05-16 |
| 6946739 | Layered semiconductor devices with conductive vias | — | 2005-09-20 |
| 6649497 | Method of forming vias in silicon carbide and resulting devices and circuits | — | 2003-11-18 |
| 6515303 | Method of forming vias in silicon carbide and resulting devices and circuits | — | 2003-02-04 |
| 6475889 | Method of forming vias in silicon carbide and resulting devices and circuits | — | 2002-11-05 |