| 11316028 |
Nitride-based transistors with a protective layer and a low-damage recess |
Scott Sheppard, Zoltan Ring |
2022-04-26 |
$154,014,000 |
| 9666707 |
Nitride-based transistors with a cap layer and a recessed gate |
Scott Sheppard |
2017-05-30 |
$3,002,000 |
| 9224596 |
Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers |
Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Scott Sheppard |
2015-12-29 |
$5,485,000 |
| 9166033 |
Methods of passivating surfaces of wide bandgap semiconductor devices |
Adam William Saxler, Scott Sheppard |
2015-10-20 |
$11,584,000 |
| 9142636 |
Methods of fabricating nitride-based transistors with an ETCH stop layer |
Scott Sheppard, Andrew Mackenzie, Scott Allen |
2015-09-22 |
$2,694,000 |
| 8946777 |
Nitride-based transistors having laterally grown active region and methods of fabricating same |
Adam William Saxler, Scott Sheppard |
2015-02-03 |
$6,194,000 |
| 8803198 |
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
Scott Sheppard, Adam William Saxler, Yifeng Wu |
2014-08-12 |
$9,034,000 |
| 8575651 |
Devices having thick semi-insulating epitaxial gallium nitride layer |
Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Scott Sheppard |
2013-11-05 |
$13,375,000 |
| 8212289 |
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
Scott Sheppard, Adam William Saxler, Yifeng Wu |
2012-07-03 |
$4,921,000 |
| 8049252 |
Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices |
Scott Sheppard |
2011-11-01 |
$9,288,000 |
| 7906799 |
Nitride-based transistors with a protective layer and a low-damage recess |
Scott Sheppard, Zoltan Ring |
2011-03-15 |
$26,314,000 |
| 7858460 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more |
2010-12-28 |
$17,928,000 |
| 7855401 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Scott Sheppard, Zoltan Ring |
2010-12-21 |
$36,454,000 |
| 7709859 |
Cap layers including aluminum nitride for nitride-based transistors |
Adam William Saxler, Scott Sheppard |
2010-05-04 |
$24,785,000 |
| 7709269 |
Methods of fabricating transistors including dielectrically-supported gate electrodes |
Scott Sheppard |
2010-05-04 |
$24,785,000 |
| 7678628 |
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
Scott Sheppard |
2010-03-16 |
$34,966,000 |
| 7550784 |
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
Adam William Saxler, Scott Sheppard |
2009-06-23 |
$10,489,000 |
| 7525122 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more |
2009-04-28 |
$29,279,000 |
| 7465967 |
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
Scott Sheppard, Adam William Saxler, Yifeng Wu |
2008-12-16 |
$18,405,000 |
| 7456443 |
Transistors having buried n-type and p-type regions beneath the source region |
Adam William Saxler, Scott Sheppard |
2008-11-25 |
$9,418,000 |
| 7432142 |
Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
Adam William Saxler |
2008-10-07 |
$13,460,000 |
| 7332795 |
Dielectric passivation for semiconductor devices |
Scott Sheppard, John Williams Palmour |
2008-02-19 |
$12,240,000 |
| 7238560 |
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
Scott Sheppard |
2007-07-03 |
$24,953,000 |
| 7045404 |
Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
Scott Sheppard, Zoltan Ring |
2006-05-16 |
$18,481,000 |
| 6982204 |
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
Adam William Saxler, Scott Sheppard |
2006-01-03 |
$23,420,000 |