Issued Patents All Time
Showing 25 most recent of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12074150 | Module configurations for integrated III-nitride devices | David Michael Rhodes, Yifeng Wu, Sung Hae Yea | 2024-08-27 |
| 11791385 | Wide bandgap transistors with gate-source field plates | Yifeng Wu, Umesh Mishra, Scott Sheppard | 2023-10-17 |
| 11749656 | Module configurations for integrated III-Nitride devices | David Michael Rhodes, Yifeng Wu, Sung Hae Yea | 2023-09-05 |
| 11664429 | Wide bandgap field effect transistors with source connected field plates | Yifeng Wu, Umesh Mishra, Marcia Moore | 2023-05-30 |
| 10224427 | Insulting gate AlGaN/GaN HEMT | Umesh Mishra, Yifeng Wu | 2019-03-05 |
| 10109713 | Fabrication of single or multiple gate field plates | Alessandro Chini, Umesh Mishra, Yifeng Wu | 2018-10-23 |
| 9941399 | Enhancement mode III-N HEMTs | Umesh Mishra, Robert Coffie, Likun Shen, Ilan Ben-Yaacov | 2018-04-10 |
| 9773877 | Wide bandgap field effect transistors with source connected field plates | Yifeng Wu, Umesh Mishra, Marcia Moore | 2017-09-26 |
| 9496353 | Fabrication of single or multiple gate field plates | Alessandro Chini, Umesh Mishra, Yifeng Wu | 2016-11-15 |
| 9450081 | High voltage GaN transistor | Yifeng Wu, Umesh Mishra | 2016-09-20 |
| 9437708 | Enhancement mode III-N HEMTs | Umesh Mishra, Robert Coffie, Likun Shen, Ilan Ben-Yaacov | 2016-09-06 |
| 9419124 | Insulating gate AlGaN/GaN HEMT | Umesh Mishra, Yifeng Wu | 2016-08-16 |
| 9397173 | Wide bandgap transistor devices with field plates | Yifeng Wu | 2016-07-19 |
| 9293458 | Semiconductor electronic components and circuits | James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu, Umesh Mishra | 2016-03-22 |
| 9226383 | Group III nitride based flip-chip integrated circuit and method for fabricating | Umesh Mishra, Yifeng Wu | 2015-12-29 |
| 9224596 | Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers | Adam William Saxler, Yifeng Wu, Umesh Mishra, Richard Peter Smith, Scott Sheppard | 2015-12-29 |
| 9224671 | III-N device structures and methods | Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal | 2015-12-29 |
| 9196716 | Enhancement mode III-N HEMTs | Umesh Mishra, Robert Coffie, Likun Shen, Ilan Ben-Yaacov | 2015-11-24 |
| 9171836 | Method of forming electronic components with increased reliability | Rakesh K. Lal, Robert Coffie, Yifeng Wu, Yuvaraj Dora, Umesh Mishra +2 more | 2015-10-27 |
| 9096939 | Electrolysis transistor | Umesh Mishra, Rakesh Lai, Likun Shen, Lee McCarthy | 2015-08-04 |
| 9041139 | Low voltage diode with reduced parasitic resistance and method for fabricating | Sten Heikman | 2015-05-26 |
| 9041065 | Semiconductor heterostructure diodes | Yifeng Wu, Umesh Mishra, Rongming Chu, Ilan Ben-Yaacov, Likun Shen | 2015-05-26 |
| 9041064 | High voltage GaN transistor | Yifeng Wu, Umesh Mishra | 2015-05-26 |
| 9035354 | Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods | Adam William Saxler, Yifeng Wu | 2015-05-19 |
| 8895421 | III-N device structures and methods | Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal | 2014-11-25 |