| 12074150 |
Module configurations for integrated III-nitride devices |
David Michael Rhodes, Yifeng Wu, Sung Hae Yea |
2024-08-27 |
|
| 11791385 |
Wide bandgap transistors with gate-source field plates |
Yifeng Wu, Umesh Mishra, Scott Sheppard |
2023-10-17 |
$21,302,000 |
| 11749656 |
Module configurations for integrated III-Nitride devices |
David Michael Rhodes, Yifeng Wu, Sung Hae Yea |
2023-09-05 |
|
| 11664429 |
Wide bandgap field effect transistors with source connected field plates |
Yifeng Wu, Umesh Mishra, Marcia Moore |
2023-05-30 |
$23,376,000 |
| 10224427 |
Insulting gate AlGaN/GaN HEMT |
Umesh Mishra, Yifeng Wu |
2019-03-05 |
$5,433,000 |
| 10109713 |
Fabrication of single or multiple gate field plates |
Alessandro Chini, Umesh Mishra, Yifeng Wu |
2018-10-23 |
$9,907,000 |
| 9941399 |
Enhancement mode III-N HEMTs |
Umesh Mishra, Robert Coffie, Likun Shen, Ilan Ben-Yaacov |
2018-04-10 |
|
| 9773877 |
Wide bandgap field effect transistors with source connected field plates |
Yifeng Wu, Umesh Mishra, Marcia Moore |
2017-09-26 |
$10,115,000 |
| 9496353 |
Fabrication of single or multiple gate field plates |
Alessandro Chini, Umesh Mishra, Yifeng Wu |
2016-11-15 |
$3,189,000 |
| 9450081 |
High voltage GaN transistor |
Yifeng Wu, Umesh Mishra |
2016-09-20 |
$7,609,000 |
| 9437708 |
Enhancement mode III-N HEMTs |
Umesh Mishra, Robert Coffie, Likun Shen, Ilan Ben-Yaacov |
2016-09-06 |
|
| 9419124 |
Insulating gate AlGaN/GaN HEMT |
Umesh Mishra, Yifeng Wu |
2016-08-16 |
$6,678,000 |
| 9397173 |
Wide bandgap transistor devices with field plates |
Yifeng Wu |
2016-07-19 |
$3,225,000 |
| 9293458 |
Semiconductor electronic components and circuits |
James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu, Umesh Mishra |
2016-03-22 |
|
| 9226383 |
Group III nitride based flip-chip integrated circuit and method for fabricating |
Umesh Mishra, Yifeng Wu |
2015-12-29 |
$5,485,000 |
| 9224596 |
Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers |
Adam William Saxler, Yifeng Wu, Umesh Mishra, Richard Peter Smith, Scott Sheppard |
2015-12-29 |
$5,485,000 |
| 9224671 |
III-N device structures and methods |
Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal |
2015-12-29 |
|
| 9196716 |
Enhancement mode III-N HEMTs |
Umesh Mishra, Robert Coffie, Likun Shen, Ilan Ben-Yaacov |
2015-11-24 |
|
| 9171836 |
Method of forming electronic components with increased reliability |
Rakesh K. Lal, Robert Coffie, Yifeng Wu, Yuvaraj Dora, Umesh Mishra +2 more |
2015-10-27 |
|
| 9096939 |
Electrolysis transistor |
Umesh Mishra, Rakesh Lai, Likun Shen, Lee McCarthy |
2015-08-04 |
|
| 9041139 |
Low voltage diode with reduced parasitic resistance and method for fabricating |
Sten Heikman |
2015-05-26 |
$3,140,000 |
| 9041065 |
Semiconductor heterostructure diodes |
Yifeng Wu, Umesh Mishra, Rongming Chu, Ilan Ben-Yaacov, Likun Shen |
2015-05-26 |
|
| 9041064 |
High voltage GaN transistor |
Yifeng Wu, Umesh Mishra |
2015-05-26 |
$3,140,000 |
| 9035354 |
Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods |
Adam William Saxler, Yifeng Wu |
2015-05-19 |
$15,147,000 |
| 8895421 |
III-N device structures and methods |
Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal |
2014-11-25 |
|
