Issued Patents All Time
Showing 1–25 of 158 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12266725 | Lateral III-nitride devices including a vertical gate module | Davide Bisi, Geetak Gupta, Carl Joseph Neufeld, Brian L. Swenson, Rakesh K. Lal | 2025-04-01 |
| 12230678 | III-N based material structures, methods, devices and circuit modules based on strain management | Stacia Keller, Elaheh Ahmadi, Chirag Gupta, Yusuke Tsukada | 2025-02-18 |
| 12211955 | Method to control the relaxation of thick films on lattice-mismatched substrates | Kamruzzaman Khan, Elaheh Ahmadi, Stacia Keller, Christian Wurm | 2025-01-28 |
| 12159929 | High mobility group-III nitride transistors with strained channels | Stacia Keller | 2024-12-03 |
| 11973138 | N-polar devices including a depleting layer with improved conductivity | Geetak Gupta, Davide Bisi, Rakesh K. Lal, David Michael Rhodes | 2024-04-30 |
| 11791385 | Wide bandgap transistors with gate-source field plates | Yifeng Wu, Primit Parikh, Scott Sheppard | 2023-10-17 |
| 11664429 | Wide bandgap field effect transistors with source connected field plates | Yifeng Wu, Primit Parikh, Marcia Moore | 2023-05-30 |
| 11594625 | III-N transistor structures with stepped cap layers | Matthew Guidry, Stacia Keller, Brian Romanczyk, Xun Zheng | 2023-02-28 |
| 11588096 | Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers | Yuuki ENATSU, Chirag Gupta, Stacia Keller, Anchal Agarwal | 2023-02-21 |
| 11322599 | Enhancement mode III-nitride devices having an Al1-xSixO gate insulator | Carl Joseph Neufeld, Mo Wu, Toshihide Kikkawa, Xiang Liu, David Michael Rhodes +2 more | 2022-05-03 |
| 11121216 | III-nitride devices including a graded depleting layer | Rakesh K. Lal, Geetak Gupta, Carl Joseph Neufeld, David Michael Rhodes | 2021-09-14 |
| 11101379 | Structure for increasing mobility in a high electron mobility transistor | Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry +2 more | 2021-08-24 |
| 10756207 | Lateral III-nitride devices including a vertical gate module | Davide Bisi, Geetak Gupta, Carl Joseph Neufeld, Brian L. Swenson, Rakesh K. Lal | 2020-08-25 |
| 10629681 | III-nitride devices including a graded depleting layer | Rakesh K. Lal, Geetak Gupta, Carl Joseph Neufeld, David Michael Rhodes | 2020-04-21 |
| 10529892 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2020-01-07 |
| 10312361 | Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage | Srabanti Chowdhury, Jeonghee Kim, Chirag Gupta, Stacia Keller, Silvia H. Chan | 2019-06-04 |
| 10224427 | Insulting gate AlGaN/GaN HEMT | Primit Parikh, Yifeng Wu | 2019-03-05 |
| 10224401 | III-nitride devices including a graded depleting layer | Rakesh K. Lal, Geetak Gupta, Carl Joseph Neufeld, David Michael Rhodes | 2019-03-05 |
| 10199217 | Methods of forming reverse side engineered III-nitride devices | Rongming Chu, Rakesh K. Lal | 2019-02-05 |
| 10109713 | Fabrication of single or multiple gate field plates | Alessandro Chini, Primit Parikh, Yifeng Wu | 2018-10-23 |
| 10043896 | III-Nitride transistor including a III-N depleting layer | Rakesh K. Lal, Stacia Keller, Srabanti Chowdhury | 2018-08-07 |
| 9941399 | Enhancement mode III-N HEMTs | Robert Coffie, Likun Shen, Ilan Ben-Yaacov, Primit Parikh | 2018-04-10 |
| 9935190 | Forming enhancement mode III-nitride devices | Mo Wu, Rakesh K. Lal, Ilan Ben-Yaacov, Carl Joseph Neufeld | 2018-04-03 |
| 9842922 | III-nitride transistor including a p-type depleting layer | Rakesh K. Lal, Stacia Keller, Srabanti Chowdhury | 2017-12-12 |
| 9793435 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2017-10-17 |