Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12230678 | III-N based material structures, methods, devices and circuit modules based on strain management | Umesh Mishra, Elaheh Ahmadi, Chirag Gupta, Yusuke Tsukada | 2025-02-18 |
| 12211955 | Method to control the relaxation of thick films on lattice-mismatched substrates | Kamruzzaman Khan, Elaheh Ahmadi, Christian Wurm, Umesh Mishra | 2025-01-28 |
| 12159929 | High mobility group-III nitride transistors with strained channels | Umesh Mishra | 2024-12-03 |
| 11594625 | III-N transistor structures with stepped cap layers | Matthew Guidry, Umesh Mishra, Brian Romanczyk, Xun Zheng | 2023-02-28 |
| 11588096 | Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers | Yuuki ENATSU, Chirag Gupta, Umesh Mishra, Anchal Agarwal | 2023-02-21 |
| 11101379 | Structure for increasing mobility in a high electron mobility transistor | Brian Romanczyk, Haoran Li, Elaheh Ahmadi, Steven Wienecke, Matthew Guidry +2 more | 2021-08-24 |
| 10312361 | Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage | Srabanti Chowdhury, Jeonghee Kim, Chirag Gupta, Silvia H. Chan, Umesh Mishra | 2019-06-04 |
| 10043896 | III-Nitride transistor including a III-N depleting layer | Umesh Mishra, Rakesh K. Lal, Srabanti Chowdhury | 2018-08-07 |
| 9865719 | Carbon doping semiconductor devices | Brian L. Swenson, Nicholas Fichtenbaum | 2018-01-09 |
| 9842922 | III-nitride transistor including a p-type depleting layer | Umesh Mishra, Rakesh K. Lal, Srabanti Chowdhury | 2017-12-12 |
| 9685323 | Buffer layer structures suited for III-nitride devices with foreign substrates | Brian L. Swenson, Nicholas Fichtenbaum | 2017-06-20 |
| 9443938 | III-nitride transistor including a p-type depleting layer | Umesh Mishra, Rakesh K. Lal, Srabanti Chowdhury | 2016-09-13 |
| 9281183 | Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge | Xiang Liu, Umesh Mishra, Jeonghee Kim, Matthew A. Laurent, Jing Lu +2 more | 2016-03-08 |
| 9245992 | Carbon doping semiconductor devices | Brian L. Swenson, Nicholas Fichtenbaum | 2016-01-26 |
| 9245993 | Carbon doping semiconductor devices | Brian L. Swenson, Nicholas Fichtenbaum | 2016-01-26 |
| 9165766 | Buffer layer structures suited for III-nitride devices with foreign substrates | Brian L. Swenson, Nicholas Fichtenbaum | 2015-10-20 |
| 9076927 | (In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers | Carl Joseph Neufeld, Umesh Mishra, Steven P. DenBaars | 2015-07-07 |
| 8882935 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura +1 more | 2014-11-11 |
| 8878249 | Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors | Jing Lu, Umesh Mishra | 2014-11-04 |
| 8502246 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura +1 more | 2013-08-06 |
| 8455885 | Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition | Umesh Mishra, Nicholas A. Fichtenbaum | 2013-06-04 |
| 8193020 | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition | Umesh Mishra, Nicholas Fichtenbaum | 2012-06-05 |
| 8188458 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura +1 more | 2012-05-29 |
| 7982208 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura +1 more | 2011-07-19 |
| 7977694 | High light extraction efficiency light emitting diode (LED) with emitters within structured materials | Aurelien J. F. David, Claude C. A. Weisbuch, Steven P. DenBaars | 2011-07-12 |