Issued Patents All Time
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12412744 | Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing | Dong Ji | 2025-09-09 |
| 11961837 | Semiconductor apparatuses and methods involving diamond and GaN-based FET structures | Mohamadali Malakoutian, Matthew A. Laurent, Chenhao Ren, Siwei Li | 2024-04-16 |
| 10903371 | Three dimensional vertically structured MISFET/MESFET | Adam Conway, Sara Elizabeth Harrison, Rebecca J. Nikolic, Qinghui Shao, Lars Voss | 2021-01-26 |
| 10418475 | Diamond based current aperture vertical transistor and methods of making and using the same | Maitreya Dutta, Robert J. Nemanich, Franz A. Koeck | 2019-09-17 |
| 10312361 | Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage | Jeonghee Kim, Chirag Gupta, Stacia Keller, Silvia H. Chan, Umesh Mishra | 2019-06-04 |
| 10121657 | Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation | Franz A. Koeck, Robert J. Nemanich | 2018-11-06 |
| 10043896 | III-Nitride transistor including a III-N depleting layer | Umesh Mishra, Rakesh K. Lal, Stacia Keller | 2018-08-07 |
| 9893174 | III-nitride based N polar vertical tunnel transistor | Dong Ji | 2018-02-13 |
| 9842922 | III-nitride transistor including a p-type depleting layer | Umesh Mishra, Rakesh K. Lal, Stacia Keller | 2017-12-12 |
| 9634100 | Semiconductor devices with integrated hole collectors | Umesh Mishra, Ilan Ben-Yaacov | 2017-04-25 |
| 9590088 | Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer | Ramya Yeluri, Christophe Hurni, Umesh Mishra, Ilan Ben-Yaacov | 2017-03-07 |
| 9520491 | Electrodes for semiconductor devices and methods of forming the same | Umesh Mishra, Yuvaraj Dora | 2016-12-13 |
| 9490324 | N-polar III-nitride transistors | Umesh Mishra, Carl Joseph Neufeld | 2016-11-08 |
| 9443849 | Semiconductor electronic components with integrated current limiters | Yifeng Wu, Umesh Mishra | 2016-09-13 |
| 9443938 | III-nitride transistor including a p-type depleting layer | Umesh Mishra, Rakesh K. Lal, Stacia Keller | 2016-09-13 |
| 9437707 | Transistors with isolation regions | Umesh Mishra | 2016-09-06 |
| 9224805 | Semiconductor devices with guard rings | Umesh Mishra, Yuvaraj Dora | 2015-12-29 |
| 9184275 | Semiconductor devices with integrated hole collectors | Umesh Mishra, Ilan Ben-Yaacov | 2015-11-10 |
| 9171730 | Electrodes for semiconductor devices and methods of forming the same | Umesh Mishra, Yuvaraj Dora | 2015-10-27 |
| 9171836 | Method of forming electronic components with increased reliability | Rakesh K. Lal, Robert Coffie, Yifeng Wu, Primit Parikh, Yuvaraj Dora +2 more | 2015-10-27 |
| 9171910 | Semiconductor electronic components with integrated current limiters | Yifeng Wu, Umesh Mishra | 2015-10-27 |
| 9147760 | Transistors with isolation regions | Umesh Mishra | 2015-09-29 |
| 9093366 | N-polar III-nitride transistors | Umesh Mishra, Carl Joseph Neufeld | 2015-07-28 |
| 8937338 | Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer | Ramya Yeluri, Christophe Hurni, Umesh Mishra, Ilan Ben-Yaacov | 2015-01-20 |
| 8901604 | Semiconductor devices with guard rings | Umesh Mishra, Yuvaraj Dora | 2014-12-02 |