Issued Patents All Time
Showing 26–50 of 158 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9773877 | Wide bandgap field effect transistors with source connected field plates | Yifeng Wu, Primit Parikh, Marcia Moore | 2017-09-26 |
| 9691712 | Method of controlling stress in group-III nitride films deposited on substrates | Hugues Marchand, Brendan Jude Moran, James S. Speck | 2017-06-27 |
| 9634100 | Semiconductor devices with integrated hole collectors | Srabanti Chowdhury, Ilan Ben-Yaacov | 2017-04-25 |
| 9590088 | Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer | Srabanti Chowdhury, Ramya Yeluri, Christophe Hurni, Ilan Ben-Yaacov | 2017-03-07 |
| 9520491 | Electrodes for semiconductor devices and methods of forming the same | Srabanti Chowdhury, Yuvaraj Dora | 2016-12-13 |
| 9496353 | Fabrication of single or multiple gate field plates | Alessandro Chini, Primit Parikh, Yifeng Wu | 2016-11-15 |
| 9496137 | Methods of forming reverse side engineered III-nitride devices | Rongming Chu, Rakesh K. Lal | 2016-11-15 |
| 9490324 | N-polar III-nitride transistors | Srabanti Chowdhury, Carl Joseph Neufeld | 2016-11-08 |
| 9450081 | High voltage GaN transistor | Yifeng Wu, Primit Parikh | 2016-09-20 |
| 9443938 | III-nitride transistor including a p-type depleting layer | Rakesh K. Lal, Stacia Keller, Srabanti Chowdhury | 2016-09-13 |
| 9443849 | Semiconductor electronic components with integrated current limiters | Yifeng Wu, Srabanti Chowdhury | 2016-09-13 |
| 9437708 | Enhancement mode III-N HEMTs | Robert Coffie, Likun Shen, Ilan Ben-Yaacov, Primit Parikh | 2016-09-06 |
| 9437707 | Transistors with isolation regions | Srabanti Chowdhury | 2016-09-06 |
| 9419124 | Insulating gate AlGaN/GaN HEMT | Primit Parikh, Yifeng Wu | 2016-08-16 |
| 9343560 | Gallium nitride power devices | Chang Soo Suh | 2016-05-17 |
| 9318593 | Forming enhancement mode III-nitride devices | Mo Wu, Rakesh K. Lal, Ilan Ben-Yaacov, Carl Joseph Neufeld | 2016-04-19 |
| 9293561 | High voltage III-nitride semiconductor devices | Lee McCarthy, Nicholas Fichtenbaum | 2016-03-22 |
| 9293458 | Semiconductor electronic components and circuits | Primit Parikh, James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu | 2016-03-22 |
| 9281183 | Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge | Xiang Liu, Stacia Keller, Jeonghee Kim, Matthew A. Laurent, Jing Lu +2 more | 2016-03-08 |
| 9263423 | Interdigitated multiple pixel arrays of light-emitting devices | Arpan Chakraborty, Likun Shen | 2016-02-16 |
| 9231376 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2016-01-05 |
| 9224805 | Semiconductor devices with guard rings | Srabanti Chowdhury, Yuvaraj Dora | 2015-12-29 |
| 9226383 | Group III nitride based flip-chip integrated circuit and method for fabricating | Primit Parikh, Yifeng Wu | 2015-12-29 |
| 9224596 | Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers | Adam William Saxler, Yifeng Wu, Primit Parikh, Richard Peter Smith, Scott Sheppard | 2015-12-29 |
| 9224671 | III-N device structures and methods | Primit Parikh, Yuvaraj Dora, Yifeng Wu, Nicholas Fichtenbaum, Rakesh K. Lal | 2015-12-29 |