Issued Patents All Time
Showing 76–100 of 158 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8742459 | High voltage III-nitride semiconductor devices | Lee McCarthy, Nicholas Fichtenbaum | 2014-06-03 |
| 8686466 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2014-04-01 |
| 8664695 | Wide bandgap transistors with multiple field plates | Yifeng Wu, Primit Parikh, Marcia Moore | 2014-03-04 |
| 8643062 | III-N device structures and methods | Primit Parikh, Yuvaraj Dora, Yifeng Wu, Nicholas Fichtenbaum, Rakesh K. Lal | 2014-02-04 |
| 8643024 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N | Arpan Chakraborty, Kwang Choong Kim, James S. Speck, Steven P. DenBaars | 2014-02-04 |
| 8633518 | Gallium nitride power devices | Chang Soo Suh | 2014-01-21 |
| 8624662 | Semiconductor electronic components and circuits | Primit Parikh, James Honea, Carl C. Blake, Jr., Robert Coffie, Yifeng Wu | 2014-01-07 |
| 8598937 | High power semiconductor electronic components with increased reliability | Rakesh K. Lal, Robert Coffie, Yifeng Wu, Primit Parikh, Yuvaraj Dora +2 more | 2013-12-03 |
| 8592867 | Wide bandgap HEMTS with source connected field plates | Yifeng Wu, Primit Parikh, Marcia Moore | 2013-11-26 |
| 8575651 | Devices having thick semi-insulating epitaxial gallium nitride layer | Adam William Saxler, Yifeng Wu, Primit Parikh, Richard Peter Smith, Scott Sheppard | 2013-11-05 |
| 8558285 | Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials | Lee McCarthy | 2013-10-15 |
| 8541818 | Semiconductor heterostructure diodes | Yifeng Wu, Primit Parikh, Ilan Ben-Yaacov | 2013-09-24 |
| 8525230 | Field-effect transistor with compositionally graded nitride layer on a silicaon substrate | Hugues Marchand, Brendan Jude Moran, James S. Speck | 2013-09-03 |
| 8519438 | Enhancement mode III-N HEMTs | Robert Coffie, Likun Shen, Ilan Ben-Yaacov, Primit Parikh | 2013-08-27 |
| 8502246 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, James S. Speck, Steven P. DenBaars +1 more | 2013-08-06 |
| 8455885 | Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition | Stacia Keller, Nicholas A. Fichtenbaum | 2013-06-04 |
| 8389977 | Reverse side engineered III-nitride devices | Rongming Chu, Rakesh K. Lal | 2013-03-05 |
| 8344424 | Enhancement mode gallium nitride power devices | Chang Soo Suh | 2013-01-01 |
| 8334151 | Method for fabricating a direct wafer bonded optoelectronic device | Akihiko Murai, Christina Ye Chen, Daniel Bryce Thompson, Lee McCarthy, Steven P. DenBaars +1 more | 2012-12-18 |
| 8324637 | High efficiency LEDs with tunnel junctions | James Ibbetson, Bernd Keller | 2012-12-04 |
| 8274159 | Group III nitride based flip-chip integrated circuit and method for fabricating | Primit Parikh, Yifeng Wu | 2012-09-25 |
| 8274206 | Interdigitated multiple pixel arrays of light-emitting devices | Arpan Chakraborty, Likun Shen | 2012-09-25 |
| 8237198 | Semiconductor heterostructure diodes | Yifeng Wu, Rongming Chu, Primit Parikh, Ilan Ben-Yaacov, Likun Shen | 2012-08-07 |
| 8193562 | Enhancement mode gallium nitride power devices | Chang Soo Suh | 2012-06-05 |
| 8193020 | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition | Stacia Keller, Nicholas Fichtenbaum | 2012-06-05 |