Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10529892 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma +4 more | 2020-01-07 |
| 9793435 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma +4 more | 2017-10-17 |
| 9231376 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma +4 more | 2016-01-05 |
| 8686466 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma +4 more | 2014-04-01 |
| 8524012 | Technique for the growth of planar semi-polar gallium nitride | Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamua | 2013-09-03 |
| 8405128 | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Hitoshi Sato, John F. Kaeding, Michael Iza, Benjamin A. Haskell, Steven P. DenBaars +1 more | 2013-03-26 |
| 8368179 | Miscut semipolar optoelectronic device | John F. Kaeding, Dong-Seon Lee, Michael Iza, Hitoshi Sato, Benjamin A. Haskell +3 more | 2013-02-05 |
| 8148244 | Lateral growth method for defect reduction of semipolar nitride films | Benjamin A. Haskell, James S. Speck, Shuji Nakamura | 2012-04-03 |
| 8128756 | Technique for the growth of planar semi-polar gallium nitride | Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamua | 2012-03-06 |
| 8110482 | Miscut semipolar optoelectronic device | John F. Kaeding, Dong-Seon Lee, Michael Iza, Hitoshi Sato, Benjamin A. Haskell +3 more | 2012-02-07 |
| 7846757 | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma +4 more | 2010-12-07 |
| 7795146 | Etching technique for the fabrication of thin (Al, In, Ga)N layers | James S. Speck, Benjamin A. Haskell, P. Morgan Pattison | 2010-09-14 |
| 7704331 | Technique for the growth of planar semi-polar gallium nitride | Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura | 2010-04-27 |
| 7691658 | Method for improved growth of semipolar (Al,In,Ga,B)N | John F. Kaeding, Dong-Seon Lee, Michael Iza, Hitoshi Sato, Benjamin A. Haskell +3 more | 2010-04-06 |
| 7687293 | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Hiroshi Sato, John F. Kaeding, Michael Iza, Benjamin A. Haskell, Steven P. DenBaars +1 more | 2010-03-30 |
| 7575947 | Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Michael Iza, Benjamin A. Haskell, Steven P. DenBaars, Shuji Nakamura | 2009-08-18 |
| 7220324 | Technique for the growth of planar semi-polar gallium nitride | Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura | 2007-05-22 |