Issued Patents All Time
Showing 25 most recent of 85 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11791378 | Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Daniel Jenner Lichtenwalner | 2023-10-17 |
| 11417738 | Semiconductor structure and fabrication method thereof | — | 2022-08-16 |
| RE49167 | Passivation structure for semiconductor devices | Van Mieczkowski, Jonathan D. Young, John Williams Palmour | 2022-08-09 |
| 11184001 | Power switching devices with high dV/dt capability and methods of making such devices | Adam Barkley, Sei-Hyung Ryu, Brett Hull | 2021-11-23 |
| 11164967 | Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices | Alexander V. Suvorov | 2021-11-02 |
| 11075264 | Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Daniel Jenner Lichtenwalner | 2021-07-27 |
| 11024731 | Power module for supporting high current densities | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2021-06-01 |
| 10886396 | Transistor structures having a deep recessed P+ junction and methods for making same | Brett Hull | 2021-01-05 |
| 10840367 | Transistor structures having reduced electrical field at the gate oxide and methods for making same | Brett Hull | 2020-11-17 |
| 10601413 | Power switching devices with DV/DT capability and methods of making such devices | Adam Barkley, Sei-Hyung Ryu, Brett Hull | 2020-03-24 |
| 10510905 | Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region | Edward Robert Van Brunt, Brett Hull, Scott Allen | 2019-12-17 |
| 10424660 | Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices | Alexander V. Suvorov | 2019-09-24 |
| 10403553 | Manufacturing method for dual work-function metal gates | — | 2019-09-03 |
| 10153364 | Power module having a switch module for supporting high current densities | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2018-12-11 |
| 10115815 | Transistor structures having a deep recessed P+ junction and methods for making same | Brett Hull | 2018-10-30 |
| 9991399 | Passivation structure for semiconductor devices | Van Mieczkowski, Jonathan D. Young, John Williams Palmour | 2018-06-05 |
| 9941439 | Optically assist-triggered wide bandgap thyristors having positive temperature coefficients | — | 2018-04-10 |
| 9929284 | Power schottky diodes having local current spreading layers and methods of forming such devices | Alexander V. Suvorov | 2018-03-27 |
| 9865750 | Schottky diode | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2018-01-09 |
| 9831355 | Schottky structure employing central implants between junction barrier elements | — | 2017-11-28 |
| 9673283 | Power module for supporting high current densities | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2017-06-06 |
| 9640652 | Semiconductor devices including epitaxial layers and related methods | Brett Hull | 2017-05-02 |
| 9640609 | Double guard ring edge termination for silicon carbide devices | Charlotte Jonas, Anant Agarwal | 2017-05-02 |
| 9601605 | Bipolar junction transistor with improved avalanche capability | Anant Agarwal, Lin Cheng | 2017-03-21 |
| 9595618 | Semiconductor devices with heterojunction barrier regions and methods of fabricating same | — | 2017-03-14 |