Issued Patents All Time
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11862719 | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same | Saptharishi Sriram, Thomas J. Smith, Christer Hallin | 2024-01-02 |
| 11791378 | Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner, Qingchun Zhang | 2023-10-17 |
| 11164967 | Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices | Qingchun Zhang | 2021-11-02 |
| 11075264 | Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner, Qingchun Zhang | 2021-07-27 |
| 10892356 | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same | Saptharishi Sriram, Thomas J. Smith, Christer Hallin | 2021-01-12 |
| 10867797 | Methods and apparatuses related to shaping wafers fabricated by ion implantation | Robert Tyler Leonard, Edward Robert Van Brunt | 2020-12-15 |
| 10840334 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same | Saptharishi Sriram, Thomas J. Smith, Christer Hallin | 2020-11-17 |
| 10541306 | Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device | Michael O'Loughlin, Lin Cheng, Albert Augustus Burk, Jr., Anant Agarwal | 2020-01-21 |
| 10424660 | Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices | Qingchun Zhang | 2019-09-24 |
| 10217824 | Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling | Vipindas Pala | 2019-02-26 |
| 10192980 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same | Saptharishi Sriram, Christer Hallin | 2019-01-29 |
| 10103230 | Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions | Edward Robert Van Brunt, Vipindas Pala, Lin Cheng | 2018-10-16 |
| 9984881 | Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices | Scott Sheppard | 2018-05-29 |
| 9929284 | Power schottky diodes having local current spreading layers and methods of forming such devices | Qingchun Zhang | 2018-03-27 |
| 9887287 | Power semiconductor devices having gate trenches with implanted sidewalls and related methods | Daniel Jenner Lichtenwalner, Edward Robert Van Brunt, Brett Hull, Craig Capell | 2018-02-06 |
| 9768259 | Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling | Vipindas Pala | 2017-09-19 |
| 9484413 | Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions | Edward Robert Van Brunt, Vipindas Pala, Lin Cheng | 2016-11-01 |
| 8853065 | Methods for fabricating semiconductor devices having reduced implant contamination | — | 2014-10-07 |
| 8823057 | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices | Scott Sheppard | 2014-09-02 |
| 8216924 | Methods of fabricating transistors using laser annealing of source/drain regions | — | 2012-07-10 |
| 8080441 | Growing polygonal carbon from photoresist | — | 2011-12-20 |
| 8049272 | Transistors having implanted channel layers and methods of fabricating the same | Jason Henning, Allan Ward | 2011-11-01 |
| 8008637 | High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation | — | 2011-08-30 |
| 7880172 | Transistors having implanted channels and implanted P-type regions beneath the source region | Jason Henning, Allan Ward | 2011-02-01 |
| 7875537 | High temperature ion implantation of nitride based HEMTs | Scott Sheppard | 2011-01-25 |