Issued Patents All Time
Showing 25 most recent of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408360 | Vertical power devices having mesas and etched trenches therebetween | Sei-Hyung Ryu | 2025-09-02 |
| 12376319 | Support shield structures for trenched semiconductor devices | Woongsun Kim, Naeem Islam, Madankumar Sampath, Sei-Hyung Ryu | 2025-07-29 |
| 12289906 | Vertical power devices fabricated using implanted methods | Sei-Hyung Ryu, Arman Ur Rashid | 2025-04-29 |
| 12279448 | Trench bottom shielding methods and approaches for trenched semiconductor device structures | Woongsun Kim, Naeem Islam, Sei-Hyung Ryu | 2025-04-15 |
| 12278284 | Power semiconductor devices including a trenched gate and methods of forming such devices | Sei-Hyung Ryu, Naeem Islam, Woongsun Kim, Matthew N. McCain, Joe W. McPherson | 2025-04-15 |
| 12176423 | FinFET power semiconductor devices | Naeem Islam, Woongsun Kim, Sei-Hyung Ryu | 2024-12-24 |
| 12159909 | Power semiconductor device with reduced strain | Edward Robert Van Brunt, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more | 2024-12-03 |
| 12094926 | Sidewall dopant shielding methods and approaches for trenched semiconductor device structures | Naeem Islam, Woongsun Kim, Sei-Hyung Ryu | 2024-09-17 |
| 12094876 | Conduction enhancement layers for electrical contact regions in power devices | Woongsun Kim | 2024-09-17 |
| 12087854 | Vertical semiconductor device with improved ruggedness | Sei-Hyung Ryu, Kijeong Han, Edward Robert Van Brunt | 2024-09-10 |
| 12080790 | Power semiconductor devices including angled gate trenches | Woongsun Kim, Sei-Hyung Ryu, Naeem Islam | 2024-09-03 |
| 12057389 | Transistor semiconductor die with increased active area | Edward Robert Van Brunt | 2024-08-06 |
| 12009389 | Edge termination for power semiconductor devices and related fabrication methods | Woongsun Kim, Sei-Hyung Ryu, Naeem Islam | 2024-06-11 |
| 11990543 | Power transistor with soft recovery body diode | Kijeong Han, Sei-Hyung Ryu | 2024-05-21 |
| RE49913 | Vertical power transistor device | Vipindas Pala, Anant Agarwal, Lin Cheng, John Williams Palmour | 2024-04-09 |
| 11929420 | Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices | — | 2024-03-12 |
| 11894455 | Vertical power devices fabricated using implanted methods | Sei-Hyung Ryu, Arman Ur Rashid | 2024-02-06 |
| 11869948 | Power semiconductor device with reduced strain | Edward Robert Van Brunt, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more | 2024-01-09 |
| 11837629 | Power semiconductor devices having gate trenches and buried edge terminations and related methods | Edward Robert Van Brunt, Brett Hull | 2023-12-05 |
| 11837657 | Gate trench power semiconductor devices having improved deep shield connection patterns | Naeem Islam, Woongsun Kim, Sei-Hyung Ryu | 2023-12-05 |
| 11791378 | Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Qingchun Zhang | 2023-10-17 |
| 11769827 | Power transistor with soft recovery body diode | Kijeong Han, Sei-Hyung Ryu | 2023-09-26 |
| 11764295 | Gate trench power semiconductor devices having improved deep shield connection patterns | Woongsun Kim, Sei-Hyung Ryu, Naeem Islam | 2023-09-19 |
| 11682709 | Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof | — | 2023-06-20 |
| 11664434 | Semiconductor power devices having multiple gate trenches and methods of forming such devices | Woongsun Kim, Sei-Hyung Ryu, Naeem Islam | 2023-05-30 |