| 12408360 |
Vertical power devices having mesas and etched trenches therebetween |
Sei-Hyung Ryu |
2025-09-02 |
|
| 12376319 |
Support shield structures for trenched semiconductor devices |
Woongsun Kim, Naeem Islam, Madankumar Sampath, Sei-Hyung Ryu |
2025-07-29 |
|
| 12289906 |
Vertical power devices fabricated using implanted methods |
Sei-Hyung Ryu, Arman Ur Rashid |
2025-04-29 |
|
| 12279448 |
Trench bottom shielding methods and approaches for trenched semiconductor device structures |
Woongsun Kim, Naeem Islam, Sei-Hyung Ryu |
2025-04-15 |
|
| 12278284 |
Power semiconductor devices including a trenched gate and methods of forming such devices |
Sei-Hyung Ryu, Naeem Islam, Woongsun Kim, Matthew N. McCain, Joe W. McPherson |
2025-04-15 |
|
| 12176423 |
FinFET power semiconductor devices |
Naeem Islam, Woongsun Kim, Sei-Hyung Ryu |
2024-12-24 |
$24,953,000 |
| 12159909 |
Power semiconductor device with reduced strain |
Edward Robert Van Brunt, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more |
2024-12-03 |
$32,549,000 |
| 12094876 |
Conduction enhancement layers for electrical contact regions in power devices |
Woongsun Kim |
2024-09-17 |
$10,178,000 |
| 12094926 |
Sidewall dopant shielding methods and approaches for trenched semiconductor device structures |
Naeem Islam, Woongsun Kim, Sei-Hyung Ryu |
2024-09-17 |
$10,178,000 |
| 12087854 |
Vertical semiconductor device with improved ruggedness |
Sei-Hyung Ryu, Kijeong Han, Edward Robert Van Brunt |
2024-09-10 |
$9,201,000 |
| 12080790 |
Power semiconductor devices including angled gate trenches |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
2024-09-03 |
$10,837,000 |
| 12057389 |
Transistor semiconductor die with increased active area |
Edward Robert Van Brunt |
2024-08-06 |
$15,265,000 |
| 12009389 |
Edge termination for power semiconductor devices and related fabrication methods |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
2024-06-11 |
$30,085,000 |
| 11990543 |
Power transistor with soft recovery body diode |
Kijeong Han, Sei-Hyung Ryu |
2024-05-21 |
$53,793,000 |
| RE49913 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Lin Cheng, John Williams Palmour |
2024-04-09 |
|
| 11929420 |
Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices |
— |
2024-03-12 |
$27,421,000 |
| 11894455 |
Vertical power devices fabricated using implanted methods |
Sei-Hyung Ryu, Arman Ur Rashid |
2024-02-06 |
$55,739,000 |
| 11869948 |
Power semiconductor device with reduced strain |
Edward Robert Van Brunt, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more |
2024-01-09 |
$35,680,000 |
| 11837657 |
Gate trench power semiconductor devices having improved deep shield connection patterns |
Naeem Islam, Woongsun Kim, Sei-Hyung Ryu |
2023-12-05 |
$18,968,000 |
| 11837629 |
Power semiconductor devices having gate trenches and buried edge terminations and related methods |
Edward Robert Van Brunt, Brett Hull |
2023-12-05 |
$18,968,000 |
| 11791378 |
Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods |
Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Qingchun Zhang |
2023-10-17 |
$21,302,000 |
| 11769827 |
Power transistor with soft recovery body diode |
Kijeong Han, Sei-Hyung Ryu |
2023-09-26 |
$23,073,000 |
| 11764295 |
Gate trench power semiconductor devices having improved deep shield connection patterns |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
2023-09-19 |
$67,118,000 |
| 11682709 |
Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof |
— |
2023-06-20 |
$49,893,000 |
| 11664434 |
Semiconductor power devices having multiple gate trenches and methods of forming such devices |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
2023-05-30 |
$23,376,000 |