Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate trench power semiconductor devices having improved deep shield connection patterns

Gate trench power semiconductor devices having improved deep shield connection patterns

US Patent 11764295 · Granted Sep 19, 2023

Estimated economic value: $67,118,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of forming ohmic contacts on semiconductor devices with trench/mesa stru2025
Semiconductor devices having gate resistors with low variation in resistance val2025
Vertical power devices having mesas and etched trenches therebetween2025
Vertical power devices having mesas and etched trenches therebetween2025
Support shield structures for trenched semiconductor devices2025
Support shield structures for trenched semiconductor devices2025
Support shield structures for trenched semiconductor devices2025
Support shield structures for trenched semiconductor devices2025
Vertical power devices fabricated using implanted methods2025
Vertical power devices fabricated using implanted methods2025
Power semiconductor devices including a trenched gate and methods of forming suc2025
Power semiconductor devices including a trenched gate and methods of forming suc2025