| RE49913 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour |
2024-04-09 |
|
| D974166 |
Box for storage macaron |
— |
2023-01-03 |
|
| 10950719 |
Seminconductor device with spreading layer |
Vipindas Pala, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt |
2021-03-16 |
$80,803,000 |
| D911835 |
Folding gift box |
— |
2021-03-02 |
|
| D910900 |
Dog shaped light with speaker |
— |
2021-02-16 |
|
| 10910481 |
Semiconductor device with improved insulated gate |
Daniel Jenner Lichtenwalner, John Williams Palmour |
2021-02-02 |
$81,989,000 |
| RE48380 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour |
2021-01-05 |
|
| 10868169 |
Monolithically integrated vertical power transistor and bypass diode |
Vipindas Pala, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt |
2020-12-15 |
$63,539,000 |
| 10784338 |
Field effect transistor devices with buried well protection regions |
Anant Agarwal, Vipindas Pala, John Williams Palmour |
2020-09-22 |
$38,196,000 |
| 10600903 |
Semiconductor device including a power transistor device and bypass diode |
Edward Robert Van Brunt, Vipindas Pala |
2020-03-24 |
$14,001,000 |
| D875993 |
Bird table lamp |
— |
2020-02-18 |
|
| 10541306 |
Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device |
Michael O'Loughlin, Albert Augustus Burk, Jr., Anant Agarwal, Alexander V. Suvorov |
2020-01-21 |
$26,904,000 |
| D864904 |
Wireless loudspeaker |
— |
2019-10-29 |
|
| 10134834 |
Field effect transistor devices with buried well protection regions |
Anant Agarwal, Vipindas Pala, John Williams Palmour |
2018-11-20 |
$12,173,000 |
| 10103230 |
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions |
Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala |
2018-10-16 |
$11,280,000 |
| 9972677 |
Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls |
Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner |
2018-05-15 |
$38,467,000 |
| 9755018 |
Bipolar junction transistor structure for reduced current crowding |
Anant Agarwal, Sei-Hyung Ryu |
2017-09-05 |
$2,758,000 |
| 9741842 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour |
2017-08-22 |
$7,735,000 |
| 9601605 |
Bipolar junction transistor with improved avalanche capability |
Qingchun Zhang, Anant Agarwal |
2017-03-21 |
$5,304,000 |
| 9570585 |
Field effect transistor devices with buried well protection regions |
Anant Agarwal, Vipindas Pala, John Williams Palmour |
2017-02-14 |
$3,587,000 |
| 9570570 |
Enhanced gate dielectric for a field effect device with a trenched gate |
Daniel Jenner Lichtenwalner, Anant Agarwal, John Williams Palmour |
2017-02-14 |
$3,587,000 |
| 9515199 |
Power semiconductor devices having superjunction structures with implanted sidewalls |
Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner |
2016-12-06 |
$2,897,000 |
| 9484413 |
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions |
Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala |
2016-11-01 |
$3,277,000 |
| 9478616 |
Semiconductor device having high performance channel |
Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal |
2016-10-25 |
$4,246,000 |
| 9425265 |
Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure |
Edward Robert Van Brunt, Vipindas Pala, Anant Agarwal |
2016-08-23 |
$3,248,000 |
