LC

Lin Cheng

CR Cree: 33 patents #40 of 639Top 7%
PI Power Integrations: 3 patents #95 of 206Top 50%
SI Ss Sc Ip: 2 patents #2 of 9Top 25%
WO Wolfspeed: 1 patents #111 of 187Top 60%
SL Semisouth Laboratories: 1 patents #9 of 10Top 90%
MU Mississippi State University: 1 patents #79 of 258Top 35%
TSMC: 1 patents #8,466 of 12,232Top 70%
Overall (All Time): #60,216 of 4,157,543Top 2%
47
Patents All Time

Issued Patents All Time

Showing 25 most recent of 47 patents

Patent #TitleCo-InventorsDate
RE49913 Vertical power transistor device Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour 2024-04-09
D974166 Box for storage macaron 2023-01-03
10950719 Seminconductor device with spreading layer Vipindas Pala, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt 2021-03-16
D911835 Folding gift box 2021-03-02
D910900 Dog shaped light with speaker 2021-02-16
10910481 Semiconductor device with improved insulated gate Daniel Jenner Lichtenwalner, John Williams Palmour 2021-02-02
RE48380 Vertical power transistor device Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour 2021-01-05
10868169 Monolithically integrated vertical power transistor and bypass diode Vipindas Pala, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt 2020-12-15
10784338 Field effect transistor devices with buried well protection regions Anant Agarwal, Vipindas Pala, John Williams Palmour 2020-09-22
10600903 Semiconductor device including a power transistor device and bypass diode Edward Robert Van Brunt, Vipindas Pala 2020-03-24
D875993 Bird table lamp 2020-02-18
10541306 Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device Michael O'Loughlin, Albert Augustus Burk, Jr., Anant Agarwal, Alexander V. Suvorov 2020-01-21
D864904 Wireless loudspeaker 2019-10-29
10134834 Field effect transistor devices with buried well protection regions Anant Agarwal, Vipindas Pala, John Williams Palmour 2018-11-20
10103230 Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala 2018-10-16
9972677 Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner 2018-05-15
9755018 Bipolar junction transistor structure for reduced current crowding Anant Agarwal, Sei-Hyung Ryu 2017-09-05
9741842 Vertical power transistor device Vipindas Pala, Anant Agarwal, Daniel Jenner Lichtenwalner, John Williams Palmour 2017-08-22
9601605 Bipolar junction transistor with improved avalanche capability Qingchun Zhang, Anant Agarwal 2017-03-21
9570585 Field effect transistor devices with buried well protection regions Anant Agarwal, Vipindas Pala, John Williams Palmour 2017-02-14
9570570 Enhanced gate dielectric for a field effect device with a trenched gate Daniel Jenner Lichtenwalner, Anant Agarwal, John Williams Palmour 2017-02-14
9515199 Power semiconductor devices having superjunction structures with implanted sidewalls Edward Robert Van Brunt, Vipindas Pala, Daniel Jenner Lichtenwalner 2016-12-06
9484413 Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala 2016-11-01
9478616 Semiconductor device having high performance channel Sarit Dhar, Sei-Hyung Ryu, Anant Agarwal 2016-10-25
9425265 Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure Edward Robert Van Brunt, Vipindas Pala, Anant Agarwal 2016-08-23