| 9984894 |
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
Sei-Hyung Ryu, Anant Agarwal, John R. Williams |
2018-05-29 |
| 9478616 |
Semiconductor device having high performance channel |
Sei-Hyung Ryu, Lin Cheng, Anant Agarwal |
2016-10-25 |
| 9396946 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
Lin Cheng, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Erik Maki +2 more |
2016-07-19 |
| 9343540 |
Transistors with a gate insulation layer having a channel depleting interfacial charge |
Sei-Hyung Ryu |
2016-05-17 |
| 9312343 |
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal |
2016-04-12 |
| 9269580 |
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof |
Lin Cheng, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Jason Gurganus |
2016-02-23 |
| 9142662 |
Field effect transistor devices with low source resistance |
Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Charlotte Jonas, Anant Agarwal +1 more |
2015-09-22 |
| 9029945 |
Field effect transistor devices with low source resistance |
Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Charlotte Jonas, Anant Agarwal +1 more |
2015-05-12 |
| 8841682 |
Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods |
Sei-Hyung Ryu |
2014-09-23 |