| 9640609 |
Double guard ring edge termination for silicon carbide devices |
Qingchun Zhang, Anant Agarwal |
2017-05-02 |
| 9548374 |
High power insulated gate bipolar transistors |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal |
2017-01-17 |
| 9184237 |
Vertical power transistor with built-in gate buffer |
Sei-Hyung Ryu, Craig Capell, David Grider |
2015-11-10 |
| 9142662 |
Field effect transistor devices with low source resistance |
Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Anant Agarwal +1 more |
2015-09-22 |
| 9064710 |
Transistor with A-face conductive channel and trench protecting well region |
Qingchun Zhang, Anant Agarwal |
2015-06-23 |
| 9029945 |
Field effect transistor devices with low source resistance |
Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Anant Agarwal +1 more |
2015-05-12 |
| 8710510 |
High power insulated gate bipolar transistors |
Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal |
2014-04-29 |
| 8211770 |
Transistor with A-face conductive channel and trench protecting well region |
Qingchun Zhang, Anant Agarwal |
2012-07-03 |
| 7989882 |
Transistor with A-face conductive channel and trench protecting well region |
Qingchun Zhang, Anant Agarwal |
2011-08-02 |