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David Grider — 11 Patents

RDRf Micro Devices: 6 patents #57 of 325Top 20%
HLHrl Laboratories: 3 patents #311 of 709Top 45%
CRCree: 1 patents #444 of 639Top 70%
Honeywell: 1 patents #13,456 of 16,504Top 85%
Bloomington, MN: #130 of 1,157 inventorsTop 15%
Minnesota: #6,919 of 52,454 inventorsTop 15%
Overall (All Time): #435,149 of 4,157,543Top 15%
11 Patents All Time
David Grider has been granted 11 US patents while listed as an inventor at Rf Micro Devices. The first was granted in 1994 and the most recent in November 2015. David Grider ranks #435,149 of 4,157,543 US inventors in our database (top 10.5%). Patent records list David Grider in Bloomington, MN, US.

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
9184237 Vertical power transistor with built-in gate buffer Sei-Hyung Ryu, Craig Capell, Charlotte Jonas 2015-11-10 $9,963,000
7968391 High voltage GaN-based transistor structure Joseph A. Smart, Brook Hosse, Shawn R. Gibb, Jeffrey B. Shealy 2011-06-28 $16,394,000
7514759 Piezoelectric MEMS integration with GaN technology Sarabjit Mehta, Wah S. Wong 2009-04-07 $16,122,000
7459356 High voltage GaN-based transistor structure Joseph A. Smart, Brook Hosse, Shawn R. Gibb, Jeffrey B. Shealy 2008-12-02 $2,158,000
7408182 Surface passivation of GaN devices in epitaxial growth chamber Joseph A. Smart, Shawn R. Gibb, Brook Hosse, Jeffrey B. Shealy 2008-08-05 $4,126,000
7247893 Non-planar nitride-based heterostructure field effect transistor Jeong-Sun Moon, Paul Hashimoto, Wah S. Wong 2007-07-24 $15,186,000
7052942 Surface passivation of GaN devices in epitaxial growth chamber Joseph A. Smart, Shawn R. Gibb, Brook Hosse, Jeffrey B. Shealy 2006-05-30 $5,163,000
7033961 Epitaxy/substrate release layer Joseph A. Smart, Brook Hosse, Shawn R. Gibb, Jeffrey B. Shealy 2006-04-25 $18,564,000
7026665 High voltage GaN-based transistor structure Joseph A. Smart, Brook Hosse, Shawn R. Gibb, Jeffrey B. Shealy 2006-04-11 $16,791,000
6830945 Method for fabricating a non-planar nitride-based heterostructure field effect transistor Jeong-Sun Moon, Paul Hashimoto, Wah S. Wong 2004-12-14
5298772 Integrated heterostructure acoustic charge transport (HACT) and heterostructure insulated gate field effects transistor (HIGFET) devices Andrzej Peczalski, James F. Detry, George A. Kilgore, William J. Tanski, Thomas W. Grudkowski +1 more 1994-03-29 $4,996,000

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Hermann Lubbert11
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Ian C. Richards11
Chad Huffman11
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